ZHCSIQ6B September   2018  – August 2021 LM5176-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 7.3.2  VCC Regulator and Optional BIAS Input
      3. 7.3.3  Enable/UVLO
      4. 7.3.4  Soft-Start
      5. 7.3.5  Overcurrent Protection
      6. 7.3.6  Average Input/Output Current Limiting
      7. 7.3.7  Operation Above 40-V Input
      8. 7.3.8  CCM Operation
      9. 7.3.9  Frequency and Synchronization (RT/SYNC)
      10. 7.3.10 Frequency Dithering
      11. 7.3.11 Output Overvoltage Protection (OVP)
      12. 7.3.12 Power Good (PGOOD)
      13. 7.3.13 Gm Error Amplifier
      14. 7.3.14 Integrated Gate Drivers
      15. 7.3.15 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown, Standby, and Operating Modes
      2. 7.4.2 MODE Pin Configuration
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH Tools
        2. 8.2.2.2  Frequency
        3. 8.2.2.3  VOUT
        4. 8.2.2.4  Inductor Selection
        5. 8.2.2.5  Output Capacitor
        6. 8.2.2.6  Input Capacitor
        7. 8.2.2.7  Sense Resistor (RSENSE)
        8. 8.2.2.8  Slope Compensation
        9. 8.2.2.9  UVLO
        10. 8.2.2.10 Soft-Start Capacitor
        11. 8.2.2.11 Dither Capacitor
        12. 8.2.2.12 MOSFETs QH1 and QL1
        13. 8.2.2.13 MOSFETs QH2 and QL2
        14. 8.2.2.14 Frequency Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design with WEBENCH Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

8.2.2.13 MOSFETs QH2 and QL2

The output side MOSFETs QH2 and QL2 see the output voltage of 12 V and additional transient spikes at SW2 during switching. Therefore, QH2 and QL2 should be rated for 20 V or more. The gate plateau voltages of the MOSFETs should be smaller than the minimum input voltage of the converter, otherwise the MOSFETs may not fully enhance during start-up or overload conditions.

The power loss in QH2 in the buck mode of operation is approximated by:

Equation 34. GUID-4407D89C-9F38-46B5-8D32-1846A5E2767B-low.gif

The power loss in QL2 in the boost mode of operation consists of both conduction and switching loss components given by Equation 35 and Equation 36, respectively:

Equation 35. GUID-93217C59-3987-4892-B7F4-2383ECD26787-low.gif
Equation 36. GUID-A01055AA-D0EF-42E7-9EA3-E18D9858D71C-low.gif

The rise (tr) and the fall (tf) times can be based on the MOSFET datasheet information or measured in the lab. Typically a MOSFET with smaller RDSON (lower conduction loss) has longer rise and fall times (larger switching loss).

The power loss in QH2 in the boost mode of operation is shown in Equation 37:

Equation 37. GUID-41AD07A3-C40C-4953-9C48-EA7D6581F0E4-low.gif