ZHCS571I August   2010  – April  2018 LM5119

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化应用电路
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Voltage Start-Up Regulator
      2. 7.3.2  UVLO
      3. 7.3.3  Enable 2
      4. 7.3.4  Oscillator and Sync Capability
      5. 7.3.5  Error Amplifiers and PWM Comparators
      6. 7.3.6  Ramp Generator
      7. 7.3.7  Current Limit
      8. 7.3.8  Hiccup Mode Current Limiting
      9. 7.3.9  Soft Start
      10. 7.3.10 HO and LO Output Drivers
      11. 7.3.11 Maximum Duty Cycle
      12. 7.3.12 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Diode Emulation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Miscellaneous Functions
      2. 8.1.2 Interleaved Two-Phase Operation
      3. 8.1.3 Interleaved 4-Phase Operation
    2. 8.2 Typical Applications
      1. 8.2.1 Dual-output Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Timing Resistor
          2. 8.2.1.2.2  Output Inductor
          3. 8.2.1.2.3  Current Sense Resistor
          4. 8.2.1.2.4  Ramp Resistor and Ramp Capacitor
          5. 8.2.1.2.5  Output Capacitors
          6. 8.2.1.2.6  Input Capacitors
          7. 8.2.1.2.7  VCC Capacitor
          8. 8.2.1.2.8  Bootstrap Capacitor
          9. 8.2.1.2.9  Soft-Start Capacitor
          10. 8.2.1.2.10 Restart Capacitor
          11. 8.2.1.2.11 Output Voltage Divider
          12. 8.2.1.2.12 UVLO Divider
            1. 8.2.1.2.12.1 MOSFET Selection
          13. 8.2.1.2.13 MOSFET Snubber
          14. 8.2.1.2.14 Error Amplifier Compensation
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Two-Phase Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Switching Jitter Root Causes and Solutions
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.4 Oscillator and Sync Capability

The LM5119 switching frequency is set by a single external resistor connected between the RT pin and the AGND pin (RT). The resistor must be located very close to the device and connected directly to the pins of the IC (RT and AGND). To set a desired switching frequency (fSW) of each channel, the resistor can be calculated with Equation 1.

Equation 1. LM5119 30124023.gif

where

  • RT is in ohms
  • fSW is in hertz

The frequency fSW is the output switching frequency of each channel. The internal oscillator runs at twice the switching frequency and an internal frequency divider interleaves the two channels with 180° phase shift between PWM pulses at the HO pins.

The RT pin can be used to synchronize the internal oscillator to an external clock. The internal oscillator can be synchronized by AC coupling a positive edge into the RT pin. The voltage at the RT pin is nominally 1.25 V and the voltage at the RT pin must exceed 4 V to trip the internal synchronization pulse detector. A 5-V amplitude signal and 100-pF coupling capacitor are recommended. Synchronizing at greater than twice the free-running frequency may result in abnormal behavior of the pulse width modulator. Also, note that the output switching frequency of each channel is one-half the applied synchronization frequency.