ZHCSI45 April   2018 LM3478Q-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型的高效升压转换器
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings - LM3478Q-Q1
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage Protection
      2. 7.3.2 Slope Compensation Ramp
      3. 7.3.3 Frequency Adjust/Shutdown
      4. 7.3.4 Short-Circuit Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical High Efficiency Step-Up (Boost) Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Custom Design with WEBENCH Tools
          2. 8.2.1.2.2  Power Inductor Selection
          3. 8.2.1.2.3  Programming the Output Voltage
          4. 8.2.1.2.4  Setting the Current Limit
          5. 8.2.1.2.5  Current Limit with External Slope Compensation
          6. 8.2.1.2.6  Power Diode Selection
          7. 8.2.1.2.7  Power MOSFET Selection
          8. 8.2.1.2.8  Input Capacitor Selection
          9. 8.2.1.2.9  Output Capacitor Selection
          10. 8.2.1.2.10 Compensation
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical SEPIC Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Power MOSFET Selection
          2. 8.2.2.2.2 Power Diode Selection
          3. 8.2.2.2.3 Selection of Inductors L1 and L2
          4. 8.2.2.2.4 Sense Resistor Selection
          5. 8.2.2.2.5 Sepic Capacitor Selection
          6. 8.2.2.2.6 Input Capacitor Selection
          7. 8.2.2.2.7 Output Capacitor Selection
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 使用 WEBENCH 工具创建定制设计
    2. 11.2 接收文档更新通知
    3. 11.3 文档支持
      1. 11.3.1 相关文档
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2 Typical SEPIC Converter

LM3478Q-Q1 10135544Q1.gifFigure 34. Typical SEPIC Converter

Since the LM3478Q-Q1 controls a low-side N-Channel MOSFET, it can also be used in SEPIC (Single Ended Primary Inductance Converter) applications. An example of a SEPIC using the LM3478Q-Q1 is shown in Figure 34. Note that the output voltage can be higher or lower than the input voltage. The SEPIC uses two inductors to step-up or step-down the input voltage. The inductors L1 and L2 can be two discrete inductors or two windings of a coupled inductor since equal voltages are applied across the inductor throughout the switching cycle. Using two discrete inductors allows use of catalog magnetics, as opposed to a custom inductor. The input ripple can be reduced along with size by using the coupled windings for L1 and L2.

Due to the presence of the inductor L1 at the input, the SEPIC inherits all the benefits of a boost converter. One main advantage of a SEPIC over a boost converter is the inherent input to output isolation. The capacitor CS isolates the input from the output and provides protection against a shorted or malfunctioning load. Hence, the SEPIC is useful for replacing boost circuits when true shutdown is required. This means that the output voltage falls to 0V when the switch is turned off. In a boost converter, the output can only fall to the input voltage minus a diode drop.

The duty cycle of a SEPIC is given using Equation 34.

Equation 34. LM3478Q-Q1 10135568.png

In Equation 34, VQ is the on-state voltage of the MOSFET, Q, and VDIODE is the forward voltage drop of the diode.