SNOSC48O June   2000  – December 2014 LM2936

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 3-V LM2936
    6. 6.6 Electrical Characteristics for 3.3-V LM2936
    7. 6.7 Electrical Characteristics for 5-V LM2936
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High Input Operating Voltage
      2. 7.3.2 Thermal Shutdown (TSD)
      3. 7.3.3 Short-Circuit Current Limit
      4. 7.3.4 Shutdown (SD) Pin
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External Capacitors
          1. 8.2.2.1.1 Minimum Capacitance
          2. 8.2.2.1.2 ESR Limits
        2. 8.2.2.2 Output Capacitor ESR
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following:

Texas Instruments Application Report Semiconductor and IC Package Thermal Metrics (SPRA953)

11.2 Trademarks

WEBENCH is a registered trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.