6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
|
MIN |
MAX |
UNIT |
V+ to GND voltage |
|
5.8 |
V |
OUT to GND voltage |
|
11.6 |
V |
OUT to V+ voltage |
|
5.8 |
V |
SD |
(GND − 0.3 V) |
(V+ + 0.3 V) |
|
V+ and OUT continuous output current |
|
50 |
mA |
Output short-circuit duration to GND(3) |
|
1 |
sec |
Continuous power dissipation (TA = 25°C)(4)
|
|
600 |
mW |
TJ-MAX(4) |
|
150 |
°C |
Lead temperature (soldering, 10 sec.) |
|
300 |
°C |
Storage temperature, Tstg |
−65 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and must be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
(4) The maximum allowable power dissipation is calculated by using PD-MAX = (TJ-MAX − TA)/RθJA, where TJ-MAX is the maximum junction temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.
6.5 Electrical Characteristics
MIN and MAX limits apply over the full operating temperature range. Unless otherwise specified: TJ = 25°C, V+ = 5 V,
C1 = C2 = 3.3 μF.(1)
PARAMETER |
TEST CONDITIONS |
MIN(2) |
TYP(3) |
MAX(2) |
UNIT |
V+ |
Supply voltage |
|
2.5 |
|
5.5 |
V |
IQ |
Supply current |
No load |
|
650 |
1250 |
µA |
ISD |
Shutdown supply current |
|
|
1 |
|
µA |
VSD |
Shutdown pin input voltage |
Normal operation |
2(4) |
|
|
V |
Shutdown mode |
|
|
0.8(5) |
IL |
Output current |
|
40 |
|
|
mA |
RSW |
Sum of the Rds(on)of the four internal MOSFET switches |
IL = 40 mA |
|
3.5 |
8 |
Ω |
ROUT |
Output resistance(6) |
IL = 40 mA |
|
12 |
25 |
Ω |
ƒOSC |
Oscillator frequency |
See(7) |
80 |
160 |
|
kHz |
ƒSW |
Switching frequency |
See(7) |
40 |
80 |
|
kHz |
PEFF |
Power efficiency |
RL (1 kΩ) between GND and OUT |
90% |
94% |
|
|
IL = 40 mA to GND |
|
90% |
|
VOEFF |
Voltage conversion efficiency |
No load |
99% |
99.96% |
|
|
(1) In the test circuit, capacitors C1 and C2 are 3.3-µF, 0.3-Ω maximum ESR capacitors. Capacitors with higher ESR increase output resistance, reduce output voltage and efficiency.
(2) Min. and Max. limits are ensured by design, test, or statistical analysis.
(3) Typical numbers are not ensured but represent the most likely norm.
(4) The minimum input high for the SD pin equals 40% of V+.
(5) The maximum input low for the SD pin equals 20% of V+.
(6) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in
Application and Implementation for simple negative voltage converter.
(7) The output switches operate at one half of the oscillator frequency, ƒOSC = 2ƒSW.