SNOSBH7F April   1999  – September 2014 LF412-N

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 AC Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input and Output Stage
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(8)
LF412A LF412 UNIT
MIN MAX MIN MAX
Supply Voltage –22 22 –18 18 V
Differential Input Voltage –38 38 –30 30 V
Input voltage Range(1)
Output Short Circuit Duration(2) Continuous Continuous
TO Package PDIP Package
Power Dissipation(9) See (3) 670 mW
Tj max 150 115 °C
Operating Temp. Range See (4) See (4)
Lead Temp. (Soldering, 10 sec.) 260 260 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

TO and PDIP Package UNIT
MIN MAX
Tstg Storage temperature range −65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM),
per ANSI/ESDA/JEDEC JS-001, all pins(1)		 -1700 1700(10) V
Charged device model (CDM),
per JEDEC specification JESD22-C101, all pins(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply Voltage LF412A ±20 V
Supply Voltage LF412 ±15 V

6.4 Thermal Information

THERMAL METRIC(1) TO Package PDIP Package UNIT
RθJA Junction-to-ambient thermal resistance (Typical) 152 115 °C/W
RθJC(top) Junction-to-case (top) thermal resistance
RθJB Junction-to-board thermal resistance
ψJT Junction-to-top characterization parameter
ψJB Junction-to-board characterization parameter
RθJC(bot) Junction-to-case (bottom) thermal resistance
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 DC Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS LF412A(5) LF412(5) UNIT
MIN TYP MAX MIN TYP MAX
VOS Input Offset Voltage RS=10 kΩ, TA=25°C 0.5 1.0 1.0 3.0 mV
ΔVOS/ΔT Average TC of Input Offset Voltage RS=10 kΩ 7 7 μV/°C
IOS Input Offset Current VS=±15V(5)(6) Tj=25°C 25 100 25 100 pA
Tj=70°C 2 2 nA
Tj=125°C 25 25 nA
IB Input Bias Current VS=±15V(5)(6) Tj=25°C 50 200 50 200 pA
Tj=70°C 4 4 nA
Tj=125°C 50 50 nA
RIN Input Resistance Tj=25°C 1012 1012 Ω
AVOL Large Signal
Voltage Gain		 RL=2k, TA=25°C, VS=±15V, VO=±10V 50 200 25 200 V/mV
Over Temperature 25 200 15 200
VO Output Voltage Swing VS=±15V, RL=10k ±12 ±13.5 ±12 ±13.5 V
VCM Input Common-Mode Voltage Range ±16 +19.5 ±11 +14.5 V
−16.5 −11.5 V
CMRR Common-Mode
Rejection Ratio		 RS≤10k 80 100 70 100 dB
PSRR Supply Voltage
Rejection Ratio		 See(7) 80 100 70 100 dB
IS Supply Current VO = 0V, RL = ∞ 3.6 5.6 3.6 6.5 mA

6.6 AC Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS LF412A(5) LF412(5) UNIT
MIN TYP MAX MIN TYP MAX
Amplifier to
Amplifier Coupling		 TA=25°C, f=1 Hz-20 kHz (Input Referred) −120 −120 dB
SR Slew Rate VS=±15V, TA=25°C 10 15 8 15 V/μs
GBW Gain-Bandwidth Product VS=±15V, TA=25°C 3 4 2.7 4 MHz
THD Total Harmonic Dist AV=+10, RL=10k,
VO=20 Vp-p,
BW=20 Hz-20 kHz		 ≤0.02% ≤0.02%
en Equivalent Input
Noise Voltage		 TA=25°C, RS=100Ω,
f=1 kHz		 25 25 nV / √Hz
in Equivalent Input
Noise Current		 TA=25°C, f=1 kHz 0.01 0.01 pA / √Hz
(1) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
(2) Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded.
(3) For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA.
(4) These devices are available in both the commercial temperature range 0°C≤TA≤70°C and the military temperature range −55°C≤TA≤125°C. The temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in TO package only. In all cases the maximum operating temperature is limited by internal junction temperature Tj max.
(5) Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF412A and for VS=±15V for the LF412. VOS, IB, and IOS are measured at VCM=0.
(6) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, Tj. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(7) Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS = ±6V to ±15V.
(8) Refer to RETS412X for LF412MH and LF412MJ military specifications.
(9) Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside guaranteed limits.
(10) Human body model, 1.5 kΩ in series with 100 pF.

6.7 Typical Characteristics

565610.png
Figure 1. Input Bias Current
565612.png
Figure 3. Supply Current
565614.pngFigure 5. Negative Common-Mode
Input Voltage Limit
565616.png
Figure 7. Negative Current Limit
565618.png
Figure 9. Output Voltage Swing
565620.png
Figure 11. Bode Plot
565622.png
Figure 13. Distortion vs
Frequency
565624.png
Figure 15. Open Loop Frequency
Response
565626.png
Figure 17. Power Supply Rejection
Ratio
565628.png
Figure 19. Open Loop Voltage Gain
565630.png
Figure 21. Inverter Settling Time
565637.png
Figure 23. Small Signal Non-Inverting
(RL = 2 kΩ, CL = 10 pF)
565639.png
Figure 25. Large Signal Non-Inverting
(RL = 2 kΩ, CL = 10 pF)
565611.pngFigure 2. Input Bias Current
565613.pngFigure 4. Positive Common-Mode
Input Voltage Limit
565615.png
Figure 6. Positive Current Limit
565617.png
Figure 8. Output Voltage Swing
565619.png
Figure 10. Gain Bandwidth
565621.png
Figure 12. Slew Rate
565623.png
Figure 14. Undistorted Output Voltage
Swing
565625.png
Figure 16. Common-Mode Rejection
Ratio
565627.png
Figure 18. Equivalent Input Noise
Voltage
565629.png
Figure 20. Output Impedance
565636.png
Figure 22. Small Signal Inverting
(RL = 2 kΩ, CL = 10 pF)
565638.png
Figure 24. Large Signal Inverting
(RL = 2 kΩ, CL = 10 pF)
565640.png
Figure 26. Current Limit (RL=100Ω)
(CL = 10 pF)