ZHCSGU8E June   2017  – August 2018 ISO1211 , ISO1212

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.          应用图表
      2.      ISO121x 器件与传统解决方案相比可降低电路板温度
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics—DC Specification
    10. 6.10 Switching Characteristics—AC Specification
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuits
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Sinking Inputs
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Setting Current Limit and Voltage Thresholds
          2. 9.2.1.2.2 Thermal Considerations
          3. 9.2.1.2.3 Designing for 48-V Systems
          4. 9.2.1.2.4 Designing for Input Voltages Greater Than 60 V
          5. 9.2.1.2.5 Surge, ESD, and EFT Tests
          6. 9.2.1.2.6 Multiplexing the Interface to the Host Controller
          7. 9.2.1.2.7 Status LEDs
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Sourcing Inputs
      3. 9.2.3 Sourcing and Sinking Inputs (Bidirectional Inputs)
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 相关链接
    4. 12.4 接收文档更新通知
    5. 12.5 社区资源
    6. 12.6 商标
    7. 12.7 静电放电警告
    8. 12.8 术语表
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBQ|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.9 Electrical Characteristics—DC Specification

(Over recommended operating conditions unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC1 VOLTAGE SUPPLY
VIT+ (UVLO1) Positive-going UVLO threshold voltage (VCC1) 2.25 V
VIT– (UVLO1) Negative-going UVLO threshold (VCC1) 1.7 V
VHYS (UVLO1) UVLO threshold hysteresis (VCC1) 0.2 V
ICC1 VCC1 supply quiescent current ISO1211 EN = VCC1 0.6 1 mA
ISO1212 1.2 1.9
LOGIC I/O
VIT+ (EN) Positive-going input logic threshold voltage for EN pin 0.7 × VCC1 V
VIT– (EN) Negative-going input logic threshold voltage for EN pin 0.3 × VCC1 V
VHYS(EN) Input hysteresis voltage for EN pin 0.1 × VCC1 V
IIH Low-level input leakage at EN pin EN = GND1 –10 μA
VOH High-level output voltage on OUTx VCC1 = 4.5 V; IOH = –4 mA
VCC1 = 3 V; IOH = –3 mA
VCC1= 2.25 V; IOH = –2 mA, see Figure 10 		VCC1 – 0.4 V
VOL Low-level output voltage on OUTx VCC1 = 4.5 V; IOH = 4 mA
VCC1 = 3 V; IOH = 3 mA
VCC1= 2.25 V ; IOH = 2 mA, see Figure 10 		0.4 V
CURRENT LIMIT
I(INx+SENSEx),TYP Typical sum of current drawn from IN and SENSE pins across temperature RTHR = 0 Ω, RSENSE = 562 Ω, VSENSE = 24 V,
–40°C < TA < 125°C, see Figure 11 		2.2 2.47 mA
I(INx+SENSEx) Sum of current drawn from IN and SENSE pins RTHR = 0 Ω, RSENSE = 562 Ω ± 1%;
–60 V < VSENSE < 0 V, see Figure 11 		–0.1 µA
RTHR = 0 Ω, RSENSE = 562 Ω ± 1%;
5 V < VSENSE < VIL, see Figure 11 		1.9 2.5 mA
RTHR = 0 Ω, RSENSE = 562 Ω ± 1%;
VIL < VSENSE < 30 V, see Figure 11 		2.05 2.75
RTHR = 0 Ω, RSENSE = 562 Ω ± 1%;
30 V < VSENSE < 36 V, see Figure 11 		2.1 2.83
RTHR = 0 Ω, RSENSE = 562 Ω ± 1%;
36 V < VSENSE < 60 V(1), see Figure 11 		2.1 3.1
RTHR = 0 Ω, RSENSE = 200 Ω ± 1%;
–60 V < VSENSE < 0 V, see Figure 11 		–0.1 µA
RTHR = 0 Ω, RSENSE = 200 Ω ± 1%;
5 V < VSENSE < VIL, see Figure 11 		5.3 6.8 mA
RTHR = 0 Ω, RSENSE = 200 Ω ± 1%;
VIL < VSENSE < 36 V(1), see Figure 11 		5.5 7
RTHR = 0 Ω, RSENSE = 200 Ω ± 1%;
36 V < VSENSE < 60 V(1), see Figure 11 		5.5 7.3
VOLTAGE TRANSITION THRESHOLD ON FIELD SIDE
VIL Low level threshold voltage at module input (including RTHR) for output high RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 6.5 7 V
RSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 8.7 9.2
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 15.2 15.8
VIH High level threshold voltage at module input (including RTHR) for output low RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 8.2 8.55 V
RSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 10.4 10.95
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 17 18.25
VHYS Threshold voltage hysteresis at module input RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 1 1.2 V
RSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 1 1.2
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 1 1.2
(1) See the Thermal Considerations section.