ZHCSLH7C June   2020  – June 2021 INA2290 , INA290 , INA4290

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Amplifier Input Common-Mode Range
      2. 7.3.2 Input-Signal Bandwidth
      3. 7.3.3 Low Input Bias Current
      4. 7.3.4 Low VSENSE Operation
      5. 7.3.5 Wide Fixed-Gain Output
      6. 7.3.6 Wide Supply Range
    4. 7.4 Device Functional Modes
      1. 7.4.1 Unidirectional Operation
      2. 7.4.2 High Signal Throughput
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 RSENSE and Device Gain Selection
      2. 8.1.2 Input Filtering
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Overload Recovery With Negative VSENSE
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) INA4290 INA2290 INA290 UNIT
RGV (QFN) DGK (VSSOP) DCK (SC-70)
16 PINS 8 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 45.9 169.3 191.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 41.6 60.1 144.4 °C/W
RθJB Junction-to-board thermal resistance 21.0 91.3 69.2 °C/W
ΨJT Junction-to-top characterization parameter 1.0 8.3 46.2 °C/W
ΨJB Junction-to-board characterization parameter 21.0 89.7 69.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.4 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.