ZHCSHG8F October   1995  – May 2022 INA128 , INA129

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Noise Performance
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Common-Mode Range
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Setting the Gain
        2. 9.2.2.2 Dynamic Performance
        3. 9.2.2.3 Offset Trimming
        4. 9.2.2.4 Input Bias Current Return Path
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
    1. 10.1 Low-Voltage Operation
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 PSpice® for TI
        2. 12.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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7.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, VCM = VS / 2, and G = 1 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOS Offset voltage (RTI) 1 ≤ G ≤ 10000 INA12xP, INA12xU ±10 ±100 / G ±50 ±500 / G µV
INA12xPA, INA12xUA ±25 ±100 / G ±125 ±1000 / G
Offset voltage drift (RTI)  TA = –40°C to +85°C INA12xP, INA12xU  ±0.2 ±2 / G ±0.5 ±20 / G µV/°C
INA12xPA, INA12xUA ±0.2 ±5 / G ±1 ±20 / G
PSRR Power-supply rejection ratio (RTI) VS =  ±2.25 V to ±18 V INA12xP, INA12xU ±0.2 ±20 / G ±1 ±100 / G µV/V
INA12xPA, INA12xUA ±2 ±200 / G
Long-term stability ±0.2 ±3 / G µV/mo
Input impedance Differential 10 || 2 GΩ || pF
Common-mode 100 || 9
VCM Common-mode voltage(2) VO = 0 V (V–) + 2 (V+) – 2 V
Safe input voltage  RS = 0 Ω ±40 V
CMRR Common-mode rejection ratio ΔRS = 1 kΩ, VCM = ±13 V G = 1 INA12xP, INA12xU 80 86 dB
INA12xPA, INA12xUA 73
G = 10 INA12xP, INA12xU 100 106
INA12xPA, INA12xUA 93
G = 100 INA12xP, INA12xU 120 125
INA12xPA, INA12xUA 110
G = 1000 INA12xP, INA12xU 120 130
INA12xPA, INA12xUA 110
INPUT BIAS CURRENT
IB Input bias current INA12xP, INA12xU ±2 ±5 nA
INA12xPA, INA12xUA ±10
Input bias current drift  TA = –40°C to +85°C ±30 pA/℃
IOS Input offset current INA12xP, INA12xU ±1 ±5 nA
INA12xPA, INA12xUA ±10 nA
Input offset current drift  TA = –40°C to +85°C ±30 pA/℃
NOISE
eN Voltage noise (RTI) G = 1000, RS = 0 Ω f = 10 Hz 10 nV/√Hz
f = 100 Hz 8
f = 1 kHz 8
fB = 0.1 Hz to 10 Hz 0.2 µVPP
In Current noise f = 10 Hz 0.9 pA/√Hz
f = 1 kHz 0.3
fB = 0.1 Hz to 10 Hz 30 pAPP
GAIN
Gain equation INA128 1 + (50 kΩ / RG) V/V
INA129 1 + (49.4 kΩ / RG)
G Gain 1 10000 V/V
GE Gain error G = 1 INA12xP, INA12xU ±0.01 ±0.024 %
INA12xPA, INA12xUA  ±0.1
G = 10 INA12xP, INA12xU ±0.02 ±0.4
INA12xPA, INA12xUA ±0.5
G = 100 INA12xP, INA12xU ±0.05 ±0.5
INA12xPA, INA12xUA ±0.7
G = 1000 INA12xP, INA12xU ±0.5 ±1
INA12xPA, INA12xUA ±2
Gain drift(6) TA = –40°C to +85°C  ±1 ±10 ppm/°C
50-kΩ or 49.4-kΩ resistance(3) ±25 ±100
Gain nonlinearity(1) G = 1, VO = ±13.6 V INA12xP, INA12xU ±0.0001 ±0.001 % of FSR
INA12xPA, INA12xUA ±0.002
G = 10 INA12xP, INA12xU ±0.0003 ±0.002
INA12xPA, INA12xUA ±0.004
G = 100 INA12xP, INA12xU ±0.0005 ±0.002
INA12xPA, INA12xUA ±0.004
G = 1000 ±0.001
OUTPUT
Positive output voltage swing (V+) – 1.4 V
Negative output voltage swing (V–) + 1.4 V
CL Load capacitance Stable operation 1000 pF
ISC Short-circuit current Continuous to VS / 2 +6/–15 mA
FREQUENCY RESPONSE
BW Bandwidth, –3 dB G = 1 1.3 MHz
G = 10 640 kHz
G = 100 200
G = 1000 20
SR Slew rate G = 5, VO = ±10 V  1.2 V/µs
tS Settling time To 0.01%  G = 1 12 µs
G = 10 12
G = 100 12
G = 1000 80
Overload recovery 50% input overload 4 µs
POWER SUPPLY
IQ Quiescent current VIN = 0 V ±700 ±750 µA
(1) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%
(2) Input common-mode voltage varies with output voltage; see Typical Characteristics.
(3) Temperature coefficient of the 50-kΩ or 49.4-kΩ term in the gain equation.
(4) Specified by wafer test.