ZHCSUW2 February   2024 ESD652

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - JEDEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 接收文档更新通知
    3. 7.3 支持资源
    4. 7.4 Trademarks
    5. 7.5 静电放电警告
    6. 7.6 术语表
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBZ|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 50nA -18 18 V
ILEAK Leakage current at VRWM VIO = ±18V, I/O to GND 1 50 nA
VBR Breakdown voltage, I/O to GND (1) IIO = ±10mA 19 25 V
VCLAMP Surge clamping voltage, tp = 8/20µs (2) IPP = ±1A, I/O to GND 22 25 V
IPP = ±5.5A, I/O to GND 25 32 V
VCLAMP TLP clamping voltage,  tp = 100ns  (3) IPP = ±16A TLP, I/O to GND 28 V
RDYN Dynamic resistance (4) I/O to GND 0.32 Ω
GND to I/O 0.32
CLINE Line capacitance, IO to GND VIO = 0V, f = 1MHz 4 pF
(1) VBR is defined as the voltage obtained at 10mA when sweeping the voltage up, before the device latches into the snapback state
(2) Device stressed with 8/20µs exponential decay waveform according to IEC 61000-4-5
(3) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP);  ANSI / ESD STM5.5.1-2008
(4) Extraction of RDYN using least squares fit of TLP characteristics between I = 10A and I = 20A