ZHCSIK7 数据表 | 德州仪器 TI.com.cn

ZHCSIK7C July 2018 – June 2025 ESD321

PRODUCTION DATA

5.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 50nA, across operating temperature range			3.6	V
I_LEAKAGE	Leakage current at 3.6V	V_IO = 3.6V, I/O to GND		0.1	10	nA
V_BRF	Breakdown voltage, I/O to GND ⁽¹⁾	I_IO = 1mA	4.5		7.5	V
V_FWD	Forward Voltage, GND to I/O ⁽¹⁾	I_IO = 1mA		0.8		V
V_HOLD	Holding voltage, I/O to GND ⁽²⁾	I_IO = 1mA		5.1		V
V_CLAMP	Clamping voltage	I_PP = 6A (8/20µs Surge), I/O to GND		6.3		V
		I_PP = 16A (100ns TLP), I/O to GND		6.8		V
		I_PP = 16A (100ns TLP), GND to I/O		4.7		V
R_DYN	Dynamic resistance	I/O to GND, 100ns TLP, between 10 to 20A I_PP		0.13		Ω
R_DYN	Dynamic resistance	GND to I/O , 100ns TLP, between 10 to 20A I_PP		0.2		Ω
C_LINE	Line capacitance, IO to GND	V_IO = 0V, V_p-p = 30mV, f = 1MHz		0.9	1.1	pF

(1) V_BRF and V_BRR are defined as the voltage obtained at 1mA when sweeping the voltage up, before the device latches into the snapback state

(2) V_HOLD is defined as the voltage when 1mA is applied, after the device has successfully latched into the snapback state.