ZHCSE25 August 2015 DRV8870
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
Power supply voltage (VM) | –0.3 | 50 | V |
Power supply voltage ramp rate (VM) | 0 | 2 | V/µs |
Logic input voltage (IN1, IN2) | –0.3 | 7 | V |
Reference input pin voltage (VREF) | –0.3 | 6 | V |
Continuous phase node pin voltage (OUT1, OUT2) | –0.7 | VM + 0.7 | V |
Current sense input pin voltage (ISEN) (2) | –0.5 | 1 | V |
Operating junction temperature, TJ | –40 | 150 | °C |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) | ±6000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) | ±750 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VM | Power supply voltage range | 6.5 | 45 | V | |
VREF | VREF input voltage range | 0.3 (1) | 5 | V | |
VI | Logic input voltage range (IN1, IN2) | 0 | 5.5 | V | |
fPWM | Logic input PWM frequency (IN1, IN2) | 0 | 100 | kHz | |
Ipeak | Peak output current (2) | 0 | 3.6 | A | |
TA | Operating ambient temperature (2) | –40 | 125 | °C |
THERMAL METRIC (1) | DRV8870 | UNIT | |
---|---|---|---|
DDA (HSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 41.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 53.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 23.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 8.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 23 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.7 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLY (VM) | ||||||
VM | VM operating voltage | 6.5 | 45 | V | ||
IVM | VM operating supply current | VM = 12 V | 3 | 10 | mA | |
IVMSLEEP | VM sleep current | VM = 12 V | 10 | µA | ||
tON (1) | Turn-on time | VM > VUVLO with IN1 or IN2 high | 40 | 50 | µs | |
LOGIC-LEVEL INPUTS (IN1, IN2) | ||||||
VIL | Input logic low voltage | 0.5 | V | |||
VIH | Input logic high voltage | 1.5 | V | |||
VHYS | Input logic hysteresis | 0.5 | V | |||
IIL | Input logic low current | VIN = 0 V | -1 | 1 | μA | |
IIH | Input logic high current | VIN = 3.3 V | 33 | 100 | μA | |
RPD | Pulldown resistance | to GND | 100 | kΩ | ||
tPD | Propagation delay | INx to OUTx change (see Figure 6) | 0.7 | 1 | μs | |
tsleep | Time to sleep | Inputs low to sleep | 1 | 1.5 | ms | |
MOTOR DRIVER OUTPUTS (OUT1, OUT2) | ||||||
RDS(ON) | High-side FET on resistance | VM = 24 V, I = 1 A, TA = 25°C | 307 | 360 | mΩ | |
RDS(ON) | Low-side FET on resistance | VM = 24 V, I = 1 A, TA = 25°C | 258 | 320 | mΩ | |
tDEAD | Output dead time | 220 | ns | |||
Vd | Body diode forward voltage | IOUT = 1 A | 0.8 | 1 | V | |
CURRENT REGULATION | ||||||
AV | ISEN gain | VREF = 2.5 V | 9.4 | 10 | 10.4 | V/V |
tOFF | PWM off-time | 25 | µs | |||
tBLANK | PWM blanking time | 2 | µs | |||
PROTECTION CIRCUITS | ||||||
VUVLO | VM undervoltage lockout | VM falls until UVLO triggers | 6.1 | 6.4 | V | |
VM rises until operation recovers | 6.3 | 6.5 | ||||
VUV,HYS | VM undervoltage hysteresis | Rising to falling threshold | 100 | 180 | mV | |
IOCP | Overcurrent protection trip level | 3.7 | 4.5 | 6.4 | A | |
tOCP | Overcurrent deglitch time | 1.5 | μs | |||
tRETRY | Overcurrent retry time | 3 | ms | |||
TSD | Thermal shutdown temperature | 150 | 175 | °C | ||
THYS | Thermal shutdown hysteresis | 40 | °C |