SLOS629D July 2010 – October 2016 DRV8601
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Supply voltage | –0.3 | 6 | V |
VI | Input voltage, INx, EN | –0.3 | VDD + 0.3 | V |
Output continuous total power dissipation | See Thermal Information | |||
TA | Operating free-air temperature | –40 | 85 | °C |
TJ | Operating junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD | Supply voltage | 2.5 | 5.5 | V | ||
VIH | High-level input voltage | EN | 1.15 | V | ||
VIL | Low-level input voltage | EN | 0.5 | V | ||
TA | Operating free-air temperature | –40 | 85 | °C | ||
ZL | Load impedance | 6.4 | Ω |
THERMAL METRIC(1) | DRV8601 | UNIT | ||
---|---|---|---|---|
DRB | ZQV | |||
8 PINS | 8 BALLS | |||
RθJA | Junction-to-ambient thermal resistance | 52.8 | 78 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 63 | 155 | °C/W |
RθJB | Junction-to-board thermal resistance | 28.4 | 65 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.7 | 5 | °C/W |
ψJB | Junction-to-board characterization parameter | 28.6 | 50 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 11.4 | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
|VOO| | Output offset voltage (measured differentially) |
VI = 0 V, VDD = 2.5 V to 5.5 V | 9 | mV | |||
VOD,N | Negative differential output voltage (VOUT+–VOUT–) |
VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD |
VDD = 5.0 V, Io = 400 mA | –4.55 | V | ||
VDD = 3.3 V, Io = 300 mA | –2.87 | ||||||
VDD = 2.5 V, Io = 200 mA | –2.15 | ||||||
VOD,P | Positive differential output voltage (VOUT+–VOUT–) |
VIN+ = VDD, VIN– = 0 V or VIN+ = 0 V, VIN– = VDD |
VDD = 5.0 V, Io = 400 mA | 4.55 | V | ||
VDD = 3.3 V, Io = 300 mA | 2.87 | ||||||
VDD = 2.5 V, Io = 200 mA | 2.15 | ||||||
|IIH| | High-level EN input current | VDD = 5.5 V, VI = 5.8 V | 1.2 | μA | |||
|IIL| | Low-level EN input current | VDD = 5.5 V, VI = –0.3 V | 1.2 | μA | |||
IDD(Q) | Supply current | VDD = 2.5 V to 5.5 V, No load, EN = VIH | 1.7 | 2 | mA | ||
IDD(SD) | Supply current in shutdown mode | EN = VIL, VDD = 2.5 V to 5.5 V, No load | 0.01 | 0.9 | μA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ZI | Input impedance | 2 | MΩ | |||
ZO | Output impedance | Shutdown mode (EN = VIL) | >10 | kΩ |
FIGURE | ||
---|---|---|
Output voltage (High) | vs Load current | Figure 1 |
Output voltage (Low) | vs Load current | Figure 2 |
Output voltage | vs Input voltage, RL = 10 Ω | Figure 3 |
Output voltage | vs Input voltage, RL = 20 Ω | Figure 4 |
Supply current | vs Supply voltage | Figure 5 |
Shutdown supply current | vs Supply voltage | Figure 6 |
Power dissipation | vs Supply voltage | Figure 7 |
Slew rate | vs Supply voltage | Figure 8 |
Output transition | vs Time | Figure 9, Figure 10 |
Startup | vs Time | Figure 11 |
Shutdown | vs Time | Figure 12 |