ZHCSE35 August   2015 DRV8305

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Three-Phase Gate Driver
      2. 7.3.2  Operating Modes
      3. 7.3.3  Charge Pump
      4. 7.3.4  Gate Driver Architecture
      5. 7.3.5  IDRIVE/TDRIVE
      6. 7.3.6  Slew Rate/Slope Control
      7. 7.3.7  Current Shunt Amplifiers
      8. 7.3.8  Internal Regulators (DVDD and AVDD)
      9. 7.3.9  Voltage Regulator Output for Driving External Loads (VREG)
      10. 7.3.10 Protection Features
        1. 7.3.10.1 Fault and Protection Handling
        2. 7.3.10.2 Shoothrough Protection
        3. 7.3.10.3 VDS Sensing - External FET Protection and Reporting (OC Event)
        4. 7.3.10.4 Low-Side Source Monitoring (SNS_OCP)
      11. 7.3.11 Undervoltage Reporting and Undervoltage Lockout (UVLO) Protection
        1. 7.3.11.1 Battery Overvoltage Protection (PVDD_OV)
        2. 7.3.11.2 Charge Pump Overvoltage Protection (VCPH_OV/VCP_LSD_OV)
        3. 7.3.11.3 Overtemperature (OT) Warning and Protection
        4. 7.3.11.4 dV/dt Protection
        5. 7.3.11.5 VGS Protection
        6. 7.3.11.6 Gate Driver Faults
        7. 7.3.11.7 Reverse Battery Protection
        8. 7.3.11.8 MCU Watchdog
      12. 7.3.12 Pin Control Functions
        1. 7.3.12.1 EN_GATE
        2. 7.3.12.2 SPI Pins
      13. 7.3.13 Fault / Warning Classes and Recovery
        1. 7.3.13.1 Reg 09h CLR_FLTS
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up and Operating States Hardware Configuration for VREG/VREF
        1. 7.4.1.1 POWER Up
        2. 7.4.1.2 STANDBY State
        3. 7.4.1.3 OPERATING State
        4. 7.4.1.4 SLEEP State
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Read / Write Bit
      2. 7.6.2 Status Registers
      3. 7.6.3 0x1 Warning and Watchdog Reset
      4. 7.6.4 0x2 OV/VDS Faults
      5. 7.6.5 0x3 IC Faults
      6. 7.6.6 0x4 Gate Driver VGS Faults
      7. 7.6.7 Control Registers
        1. 7.6.7.1 HS Gate Driver Control (address = 0x5)
        2. 7.6.7.2 LS Gate Driver Control (address = 0x6)
        3. 7.6.7.3 Gate Drive Control (address = 0x7)
        4. 7.6.7.4 IC Operation (address = 0x9)
        5. 7.6.7.5 Shunt Amplifier Control (address = 0xA)
        6. 7.6.7.6 Voltage Regulator Control (address = 0xB)
        7. 7.6.7.7 VDS Sense Control (address = 0xC)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Layout

10.1 Layout Guidelines

Use the following layout recommendations when designing a PCB for the DRV8305.

  • The DVDD and AVDD 1-μF bypass capacitors should connect directly to the adjacent GND pin to minimize loop impedance for the bypass capacitor.
  • The CP1 and CP2 0.047-μF flying capacitors should be placed directly next to the DRV8305 charge pump pins.
  • The VCPH 2.2-μF and VCP_LSD 1-μF bypass capacitors should be placed close to their corresponding pins with a direct path back to the DRV8305 GND net.
  • The PVDD 4.7-μF bypass capacitor should be placed as close as possible to the DRV8305 PVDD supply pin.
  • Use the proper footprint as shown in the 机械、封装和可订购信息 section.
  • Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the DRV8305 GH_X to the power MOSFET and returns through SH_X. The low-side loop is from the DRV8305 GL_X to the power MOSFET and returns through SL_X.

10.2 Layout Example

DRV8305 layout_ex_lvscx2.gif Figure 17. Layout Recommendation