ZHCSLL6B April   2021  – January 2023 DP83TC812R-Q1 , DP83TC812S-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Diagnostic Tool Kit
        1. 8.3.1.1 Signal Quality Indicator
        2. 8.3.1.2 Electrostatic Discharge Sensing
        3. 8.3.1.3 Time Domain Reflectometry
        4. 8.3.1.4 Voltage Sensing
        5. 8.3.1.5 BIST and Loopback Modes
          1. 8.3.1.5.1 Data Generator and Checker
          2. 8.3.1.5.2 xMII Loopback
          3. 8.3.1.5.3 PCS Loopback
          4. 8.3.1.5.4 Digital Loopback
          5. 8.3.1.5.5 Analog Loopback
          6. 8.3.1.5.6 Reverse Loopback
      2. 8.3.2 Compliance Test Modes
        1. 8.3.2.1 Test Mode 1
        2. 8.3.2.2 Test Mode 2
        3. 8.3.2.3 Test Mode 4
        4. 8.3.2.4 Test Mode 5
    4. 8.4 Device Functional Modes
      1. 8.4.1  Power Down
      2. 8.4.2  Reset
      3. 8.4.3  Standby
      4. 8.4.4  Normal
      5. 8.4.5  Sleep Ack
      6. 8.4.6  Sleep Request
      7. 8.4.7  Sleep Fail
      8. 8.4.8  Sleep
      9. 8.4.9  Wake-Up
      10. 8.4.10 TC10 System Example
      11. 8.4.11 Media Dependent Interface
        1. 8.4.11.1 100BASE-T1 Master and 100BASE-T1 Slave Configuration
        2. 8.4.11.2 Auto-Polarity Detection and Correction
        3. 8.4.11.3 Jabber Detection
        4. 8.4.11.4 Interleave Detection
      12. 8.4.12 MAC Interfaces
        1. 8.4.12.1 Media Independent Interface
        2. 8.4.12.2 Reduced Media Independent Interface
        3. 8.4.12.3 Reduced Gigabit Media Independent Interface
        4. 8.4.12.4 Serial Gigabit Media Independent Interface
      13. 8.4.13 Serial Management Interface
      14. 8.4.14 Direct Register Access
      15. 8.4.15 Extended Register Space Access
      16. 8.4.16 Write Address Operation
        1. 8.4.16.1 MMD1 - Write Address Operation
      17. 8.4.17 Read Address Operation
        1. 8.4.17.1 MMD1 - Read Address Operation
      18. 8.4.18 Write Operation (No Post Increment)
        1. 8.4.18.1 MMD1 - Write Operation (No Post Increment)
      19. 8.4.19 Read Operation (No Post Increment)
        1. 8.4.19.1 MMD1 - Read Operation (No Post Increment)
      20. 8.4.20 Write Operation (Post Increment)
        1. 8.4.20.1 MMD1 - Write Operation (Post Increment)
      21. 8.4.21 Read Operation (Post Increment)
        1. 8.4.21.1 MMD1 - Read Operation (Post Increment)
    5. 8.5 Programming
      1. 8.5.1 Strap Configuration
      2. 8.5.2 LED Configuration
      3. 8.5.3 PHY Address Configuration
    6. 8.6 Register Maps
      1. 8.6.1 Register Access Summary
      2. 8.6.2 DP83TC812 Registers
  9. 9 Application and Implementation
    1. 9.1 应用信息免责声明
    2. 9.2 Application Information
    3. 9.3 Typical Applications
      1. 9.3.1 Design Requirements
        1. 9.3.1.1 Physical Medium Attachment
          1. 9.3.1.1.1 Common-Mode Choke Recommendations
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Signal Traces
      2. 11.1.2 Return Path
      3. 11.1.3 Metal Pour
      4. 11.1.4 PCB Layer Stacking
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 支持资源
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12.5 静电放电警告

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif 静电放电 (ESD) 会损坏这个集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理和安装程序，可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。