ZHCSQB5C April   2019  – December 2024 DLP480RE

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Storage Conditions
    3. 5.3  ESD Ratings
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Information
    6. 5.6  Electrical Characteristics
    7. 5.7  Capacitance at Recommended Operating Conditions
    8. 5.8  Timing Requirements
    9. 5.9  System Mounting Interface Loads
    10. 5.10 Micromirror Array Physical Characteristics
    11. 5.11 Micromirror Array Optical Characteristics
    12. 5.12 Window Characteristics
    13. 5.13 Chipset Component Usage Specification
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Power Interface
      2. 6.3.2 Timing
    4. 6.4 Device Functional Modes
    5. 6.5 Optical Interface and System Image Quality Considerations
      1. 6.5.1 Optical Interface and System Image Quality
        1. 6.5.1.1 Numerical Aperture and Stray Light Control
        2. 6.5.1.2 Pupil Match
        3. 6.5.1.3 Illumination Overfill
    6. 6.6 Micromirror Array Temperature Calculation
    7. 6.7 Micromirror Power Density Calculation
    8. 6.8 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 6.8.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 6.8.2 Landed Duty Cycle and Useful Life of the DMD
      3. 6.8.3 Landed Duty Cycle and Operational DMD Temperature
      4. 6.8.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 DMD Die Temperature Sensing
  9. 8 Power Supply Recommendations
    1. 8.1 DMD Power Supply Power-Up Procedure
    2. 8.2 DMD Power Supply Power-Down Procedure
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
      1. 9.2.1 Layers
      2. 9.2.2 Impedance Requirements
      3. 9.2.3 Trace Width, Spacing
        1. 9.2.3.1 Voltage Signals
  11. 10Device and Documentation Support
    1. 10.1 第三方产品免责声明
    2. 10.2 Device Support
      1. 10.2.1 Device Nomenclature
      2. 10.2.2 Device Markings
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 支持资源
    6. 10.6 Trademarks
    7. 10.7 静电放电警告
    8. 10.8 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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5.6 Electrical Characteristics

Over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH High level output voltage VCC = 1.8V, IOH = –2mA 0.8 × VCC V
VOL Low level output voltage VCC = 1.95V, IOL = 2mA 0.2 x VCC V
IOZ High impedance output current VCC = 1.95V –40 25 µA
IIL Low level input current VCC = 1.95V, VI = 0 –1 µA
IIH High level input current (1)(2) VCC = 1.95V, VI = VCC 110 µA
ICC Supply current VCC VCC = 1.95V 715 mA
IOFFSET Supply current VOFFSET (2) VOFFSET = 10.5V 7 mA
IBIAS Supply current VBIAS (2) (3) VBIAS = 18.5V 2.75 mA
IRESET Supply current VRESET (3) VRESET = –14.5V -5 mA
PCC Supply power dissipation VCC VCC = 1.95V 1394.25 mW
POFFSET Supply power dissipation VOFFSET(2) VOFFSET = 10.5V 73.50 mW
PBIAS Supply power dissipation VBIAS(2)(3) VBIAS = 18.5V 50.87 mW
PRESET Supply power dissipation VRESET(3) VRESET = –14.5V 72.5 mW
PTOTAL Supply power dissipation VTOTAL 1591.12 mW
(1) Applies to LVCMOS pins only. Excludes LVDS pins and MBRST (15:0) pins.
(2) To prevent excess current, the supply voltage difference |VBIAS – VOFFSET| must be less than the specified limits listed in the Section 5.4 table.
(3) To prevent excess current, the supply voltage difference |VBIAS – VRESET| must be less than specified limit in Recommended Operating Conditions.