ZHCSJ19E november   2018  – august 2023 DAC60501 , DAC70501 , DAC80501

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Timing Requirements: SPI Mode
    7. 7.7  Timing Requirements: I2C Standard Mode
    8. 7.8  Timing Requirements: I2C Fast Mode
    9. 7.9  Timing Requirements: I2C Fast-Mode Plus
    10. 7.10 Timing Diagrams
    11. 7.11 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 DAC Architecture
        1. 8.3.1.1 DAC Transfer Function
        2. 8.3.1.2 DAC Register Structure
        3. 8.3.1.3 Output Amplifier
      2. 8.3.2 Internal Reference
        1. 8.3.2.1 Solder Heat Reflow
      3. 8.3.3 Power-On-Reset (POR)
      4. 8.3.4 Software Reset
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Mode
    5. 8.5 Programming
      1. 8.5.1 Serial Interface
        1. 8.5.1.1 SPI Mode
          1. 8.5.1.1.1 SYNC Interrupt
        2. 8.5.1.2 I2C Mode
          1. 8.5.1.2.1 F/S Mode Protocol
          2. 8.5.1.2.2 I2C Update Sequence
            1. 8.5.1.2.2.1 Address Byte
            2. 8.5.1.2.2.2 Command Byte
            3. 8.5.1.2.2.3 Data Byte (MSDB and LSDB)
          3. 8.5.1.2.3 I2C Read Sequence
    6. 8.6 Register Map
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Charge Injection
        2. 9.2.2.2 Voltage Droop
        3. 9.2.2.3 Output Offset Error
        4. 9.2.2.4 Switch Selection
        5. 9.2.2.5 Amplifier Selection
        6. 9.2.2.6 Hold Capacitor Selection
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information

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订购信息

Charge Injection

During the sample-to-hold transition, a small amount of charge is injected onto the hold capacitor, mostly because of the stray capacitance of the switch that creates small level changes when transitioning between states. The resulting dc offset is typically referred to as pedestal error. This error contributes to the offset error of the system. The pedestal error, ΔVOUT, is the measured offset voltage resulting from charge injection when the switch transitions to hold state. ΔVOUT is related to charge injection through Equation 2.

Equation 2. GUID-E55E4C5F-A5F5-4BF5-9DC2-BCCA79941263-low.gif

where

  • Q is the injected charge coulombs.
  • C is the value of the hold capacitor in farads.

In most solid-state switch data sheets, charge injection is graphed with respect to supply voltage, analog input, or temperature. A charge injection value of 3 pC is typical in many solid-state switches under the conditions: 25°C, 5-V supply, and 0-V analog input.