ZHCSEM4 February   2016 CSD95472Q5MC

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4修订历史记录
  5. 5Pin Configuration and Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
  7. 7Application Schematic
  8. 8器件和文档支持
    1. 8.1 社区资源
    2. 8.2 商标
    3. 8.3 静电放电警告
    4. 8.4 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 机械制图
    2. 9.2 建议印刷电路板 (PCB) 焊盘图案
    3. 9.3 建议模板开口

封装选项

机械数据 (封装 | 引脚)
  • DMC|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Pin Configuration and Functions

Top View
CSD95472Q5MC PS_Pinout _latest2.png

Pin Functions

PIN DESCRIPTION
NUMBER NAME
1 IOUT Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current.
2 REFIN External reference voltage input for current sensing amplifier.
3 ENABLE Enables device operation. If ENABLE = logic HIGH, turns on device. If ENABLE = logic LOW, the device is turned off and both MOSFET gates are actively pulled low. An internal 100 kΩ pulldown resistor will pull the ENABLE pin LOW if left floating.
4 PGND Power ground, connected directly to pin 13.
5 VDD Supply voltage to gate driver and internal circuitry.
6 VSW Phase node connecting the HS MOSFET source and LS MOSFET drain – pin connection to the output inductor.
7 VIN Input voltage pin. Connect input capacitors close to this pin.
8 BOOT_R Return path for HS gate driver, connected to VSW internally.
9 BOOT Bootstrap capacitor connection. Connect a minimum of 0.1 µF 16 V X7R ceramic capacitor from BOOT to BOOT_R pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is integrated.
10 FCCM This pin enables the diode emulation function. When this pin is held LOW, diode emulation mode is enabled for sync FET. When FCCM is HIGH, the device is operated in forced continuous conduction mode. An internal 5 µA current source will pull the FCCM pin to 3.3 V if left floating.
11 TAO/
FAULT		 Temperature Analog Output. Reports a voltage proportional to the die temperature. An ORing diode is integrated in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the ICs. Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown occurs. TAO should be bypassed to PGND with a 1 nF 16 V X7R ceramic capacitor.
12 PWM Pulse width modulated tri-state input from external controller. Logic LOW sets control FET gate low and sync FET gate high. Logic HIGH sets control FET gate high and sync FET gate low. Open or High Z sets both MOSFET gates low if greater than the tri-state shutdown hold-off time (t3HT).
13 PGND Power ground.