ZHCSDY4A July   2015  – March 2017 CSD87334Q3D

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Application
    3. 6.3 System Example
      1. 6.3.1 Power Loss Curves
      2. 6.3.2 Safe Operating Area (SOA) Curves
      3. 6.3.3 Normalized Curves
      4. 6.3.4 Calculating Power Loss and SOA
        1. 6.3.4.1 Design Example
        2. 6.3.4.2 Calculating Power Loss
        3. 6.3.4.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Recommended PCB Design Overview
      2. 7.1.2 Electrical Performance
    2. 7.2 Layout Example
    3. 7.3 Thermal Considerations
  8. 8器件和文档支持
    1. 8.1 接收文档更新通知
    2. 8.2 社区资源
    3. 8.3 商标
    4. 8.4 静电放电警告
    5. 8.5 Glossary
  9. 9机械、封装和可订购信息
    1. 9.1 Q3D 封装尺寸
    2. 9.2 焊盘布局建议
    3. 9.3 模板建议
    4. 9.4 Q3D 卷带信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 修订历史记录

Changes from * Revision (August 2015) to A Revision

  • Changed TG to TGR minimum voltage, from –8 V : to –0.3 V in Absolute Maximum Ratings tableGo
  • Changed BG to PGND minimum voltage, from –8 V : to –0.3 V in Absolute Maximum Ratings tableGo
  • Changed IGSS test condition for VGS, from +10 / –8 V : to 10 V in Electrical Characteristics tableGo
  • Added “接收文档更新通知”部分和“社区资源”部分添加到了“器件和文档支持”部分Go