ZHCSDF5A December   2014  – May 2024 CSD85301Q2

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 接收文档更新通知
    2. 5.2 支持资源
    3. 5.3 Trademarks
    4. 5.4 静电放电警告
    5. 5.5 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 PCB Land Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q2 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
  • DLV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD85301Q2 Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD85301Q2 Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD85301Q2 Gate Charge
ID = 5AVDS = 10V
Figure 4-4 Gate Charge
CSD85301Q2 Threshold Voltage vs Temperature
ID = 5A
Figure 4-6 Threshold Voltage vs Temperature
CSD85301Q2 Normalized On-State Resistance vs Temperature
ID = 5A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD85301Q2 Maximum Safe Operating Area
Single Pulse, Max RθJA = 185°C/W
Figure 4-10 Maximum Safe Operating Area
CSD85301Q2 Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD85301Q2 Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD85301Q2 Capacitance
Figure 4-5 Capacitance
CSD85301Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD85301Q2 Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD85301Q2 Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching