ZHCSDF5 数据表 | 德州仪器 TI.com.cn

ZHCSDF5 December 2014 CSD85301Q2

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	20			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 16 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 10 V			10	μA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	0.6	0.9	1.2	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 1.8 V, I_D = 0.5 A		65	99	mΩ
		V_GS = 2.5 V, I_D = 5 A		33	39	mΩ
		V_GS = 3.8 V, I_D = 5 A		25	29	mΩ
		V_GS = 4.5 V, I_D = 5 A		23	27	mΩ
g_ƒs	Transconductance	V_DS = 2 V, I_D = 5 A		20		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 10 V, ƒ = 1 MHz		361	469	pF
C_oss	Output Capacitance			68	89	pF
C_rss	Reverse Transfer Capacitance			48	62	pF
R_G	Series Gate Resistance			7.3		Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 10 V, I_D = 5 A		4.2	5.4	nC
Q_gd	Gate Charge Gate-to-Drain			1.0		nC
Q_gs	Gate Charge Gate-to-Source			1.1		nC
Q_g(th)	Gate Charge at V_th			0.5		nC
Q_oss	Output Charge	V_DS = 10 V, V_GS = 0 V		1.3		nC
t_d(on)	Turn On Delay Time	V_DS = 10 V, V_GS = 5 V, I_DS = 5 A, R_G = 0 Ω		6		ns
t_r	Rise Time			26		ns
t_d(off)	Turn Off Delay Time			14		ns
t_ƒ	Fall Time			15		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 5 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 10 V, I_F = 5 A, di/dt = 300 A/μs		7.2		nC
t_rr	Reverse Recovery Time	V_DS= 10 V, I_F = 5 A, di/dt = 300 A/μs		14		ns

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾			70	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾			185	°C/W

(1) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.

Max R_θJA = 70 when mounted on 1 inch² (6.45 cm²) of 2 oz.
(0.071 mm thick) Cu.

Max R_θJA = 185 when mounted on minimum pad area of 2 oz.
(0.071 mm thick) Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 5 A	V_DS = 10 V

Figure 4. Gate Charge

	I_D = 5 A

Figure 6. Threshold Voltage vs Temperature

	I_D = 5 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJA = 185°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching