ZHCSB65A June   2013  – June 2014 CSD75207W15

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械封装和可订购信息
    1. 7.1 CSD75207W15 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 焊盘图案
    3. 7.3 卷带封装信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated). Specifications and graphs are Per MOSFET unless otherwise stated. Drain to Drain measurements are done with both MOSFETs in series (common source configuration.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVD1D2 Drain-to-Drain Voltage VGS = 0 V, ID1D2 = –250 μA –20 V
BVGSS Gate-to-Source Voltage VD1D2 = 0 V, IG = -250 μA –6 V
IDDS Drain-to-Drain Leakage Current VGS = 0 V, VD1D2 = –16 V –1 μA
IGSS Gate-to-Source Leakage Current VD1D2 = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VD1D2 = VGS, IDS = –250 μA –0.6 –0.8 –1.1 V
RD1D2(on) Drain-to-Drain On-Resistance VGS = –1.8 V, ID1D2 = –1 A 119 162 mΩ
VGS = –2.5 V, ID1D2 = –1 A 64 77 mΩ
VGS = –4.5 V, ID1D2 = –1 A 45 54 mΩ
gfs Transconductance VD1D2 = –10 V, ID1D2 = –1 A 6.2 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VD1D2 = –10 V,
ƒ = 1 MHz		 458 595 pF
COSS Output Capacitance 225 293 pF
CRSS Reverse Transfer Capacitance 10.4 13.5 pF
Rg Series Gate Resistance 27 Ω
Qg Gate Charge Total (–4.5 V) VD1D2 = –10 V,
ID1D2 = –1 A		 2.9 3.7 nC
Qgd Gate Charge – Gate to Drain 0.4 nC
Qgs Gate Charge – Gate to Source 0.7 nC
Qg(th) Gate Charge at Vth 0.4 nC
QOSS Output Charge VD1D2 = –9.5 V, VGS = 0 V 3.1 nC
td(on) Turn On Delay Time VD1D2 = –10 V, VGS = –4.5 V,
ID1D2 = –1 A, RG = 30 Ω		 12.8 ns
tr Rise Time 8.6 ns
td(off) Turn Off Delay Time 32.1 ns
tf Fall Time 16.0 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ID1D2 = –1 A, VGS = 0 V –0.8 –1 V
Qrr Reverse Recovery Charge Vdd = –10 V, IF = –1 A, di/dt = 200 A/μs 10.5 nC
trr Reverse Recovery Time Vdd = –10 V, IF = –1 A, di/dt = 200 A/μs 23 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC TYPICAL VALUE UNIT
R θJA Junction-to-Ambient Thermal Resistance(1)(3) 70 °C/W
Junction-to-Ambient Thermal Resistance (2)(3) 165
(1) Device mounted on FR4 material with Minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-inch2 of Cu (2 oz).
(3) Measured with both devices biased in a parallel condition.
M0169-01_LPS213.gif
 Typ RθJA = 70°C/W when mounted on
1-inch2 of 2 oz. Cu.
M0170-01_LPS213.gif
 Typ RθJA = 165°C/W when mounted on minimum pad area of
2-oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS429.png
Figure 1. Transient Thermal Impedance
graph02_SLPS429.png
Figure 2. Saturation Characteristics
graph04_SLPS429.png
Figure 4. Gate Charge
graph06p2_SLPS429.png
Figure 6. Threshold Voltage vs Temperature
graph08_SLPS429.png
Figure 8. Normalized On-State Resistance vs Temperature
graph10p2_SLPS429.png
Figure 10. Maximum Safe Operating Area
graph12p2_SLPS429.png
Figure 12. Maximum Drain Current vs Temperature
graph03p3_SLPS429.png
Figure 3. Transfer Characteristics
graph05p2_SLPS429.png
Figure 5. Capacitance
graph07_SLPS429.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS429.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS429.png
Figure 11. Single Pulse Unclamped Inductive Switching