ZHCSBP6G October   2013  – January 2022 CSD23381F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23381F4 Embossed Carrier Tape Dimensions

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = –250 μA–12V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = –9.6 V–100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = –8 V–50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = –250 μA–0.7–0.95–1.20V
RDS(on)Drain-to-Source On-ResistanceVGS = –1.8 V, IDS = –0.1 A480970mΩ
VGS = –2.5 V, IDS = –0.5 A250300mΩ
VGS = –4.5 V, IDS = –0.5 A150175mΩ
gfsTransconductanceVDS = –6 V, IDS = –0.5 A2S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = –6 V,
ƒ = 1 MHz		236pF
CossOutput Capacitance98pF
CrssReverse Transfer Capacitance6.9pF
RGSeries Gate Resistance20Ω
QgGate Charge Total (4.5 V)VDS = –6 V, IDS = –0.5 A1140pC
QgdGate Charge Gate-to-Drain190pC
QgsGate Charge Gate-to-Source300pC
Qg(th)Gate Charge at Vth145pC
QossOutput ChargeVDS = –6 V, VGS = 0 V1290pC
td(on)Turn On Delay TimeVDS = –6 V, VGS = –4.5 V,
IDS = –0.5 A, RG = 2 Ω		4.5ns
trRise Time3.9ns
td(off)Turn Off Delay Time18ns
tfFall Time7ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = –0.5 A, VGS = 0 V–0.75V
QrrReverse Recovery ChargeVDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs1260pC
trrReverse Recovery Time7.9ns