ZHCSCW2 数据表 | 德州仪器 TI.com.cn

ZHCSCW2 August 2014 CSD23202W10

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = –250 μA	–12			V
BV_GSS	Gate-to-Source Voltage;	V_DS= 0 V, I_G = –250 μA	–6		–7.2	V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –9.6 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = –250 μA	–0.4	–0.6	–0.9	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.5 V, I_D = –0.5 A		82	123	mΩ
		V_GS = –1.8 V, I_D = –0.5 A		67	92	mΩ
		V_GS = –2.5 V, I_D = –0.5 A		54	66	mΩ
		V_GS = –4.5 V, I_D = –0.5 A		44	53	mΩ
g_ƒs	Transconductance	V_DS = –1.2 V, I_D = –0.5 A		5.6		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –6.0 V, ƒ = 1 MHz		394	512	pF
C_OSS	Output Capacitance			238	310	pF
C_RSS	Reverse Transfer Capacitance			29	37	pF
Q_g	Gate Charge Total (–4.5 V)	V_DS = –6 V, I_D = –0.5 A		2.9	3.8	nC
Q_gd	Gate Charge Gate-to-Drain			0.28		nC
Q_gs	Gate Charge Gate-to-Source			0.55		nC
Q_g(th)	Gate Charge at V_th			0.29		nC
Q_OSS	Output Charge	V_DS = –6 V, V_GS = 0 V		2.0		nC
t_d(on)	Turn On Delay Time	V_DS = –6 V, V_GS = –4.5 V, I_D = –0.5 A R_G = 0 Ω		9		ns
t_r	Rise Time			4		ns
t_d(off)	Turn Off Delay Time			58		ns
t_ƒ	Fall Time			21		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_S = –0.5 A, V_GS = 0 V		–0.66	–1	V
Q_rr	Reverse Recovery Charge	V_DS= –6 V, I_F = –0.5 A, di/dt = 100 A/μs		3.7		nC
t_rr	Reverse Recovery Time	V_DS= –6 V, I_F = –0.5 A, di/dt = 100 A/μs		12		ns

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		195		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		65		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Typical R_θJA = 65°C/W when mounted on
1 inch² of 2 oz. Cu.

Typical R_θJA = 195°C/W when mounted on minimum pad area of 2 oz. Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = –0.5 A		V_DS = –6 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –0.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJA = 195°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Drain-to-Source Resistance vs
Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature