ZHCSB80B June   2013  – December  2014 CSD22202W15

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械、封装和可订购信息
    1. 7.1 CSD22202W15 封装尺寸
    2. 7.2 建议的焊盘图案
    3. 7.3 卷带信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA –8 V
BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –250 μA –6 V
IDDS Drain-to-Source Leakage Current VGS = 0 V, VDS = –6.4 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA –0.6 –0.8 –1.1 V
RDS(on) Drain-to-Source On-Resistance VGS = –2.5 V, IDS = –2 A 14.5 17.4 mΩ
VGS = –4.5 V, IDS = –2 A 10.2 12.2 mΩ
gƒs Transconductance VDS = –4 V, IDS = –2 A 15.3 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz		 1060 1390 pF
COSS Output Capacitance 588 765 pF
CRSS Reverse Transfer Capacitance 192 250 pF
RG Series Gate Resistance 28 Ω
Qg Gate Charge Total (–4.5 V) VDS = –4 V,
ID = –2 A		 6.5 8.4 nC
Qgd Gate Charge - Gate-to-Drain 1 nC
Qgs Gate Charge - Gate-to-Source 1.6 nC
Qg(th) Gate Charge at Vth 0.8 nC
QOSS Output Charge VDS = –4 V, VGS = 0 V 2.7 nC
td(on) Turn On Delay Time VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 10 Ω		 10.4 ns
tr Rise Time 8.4 ns
td(off) Turn Off Delay Time 109 ns
tƒ Fall Time 38 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IDS = –2 A, VGS = 0 V –0.75 –1 V
Qrr Reverse Recovery Charge VDS = –4 V, IF = –2 A,
di/dt = 200 A/μs		 22 nC
trr Reverse Recovery Time 19 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC TYPICAL VALUES UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 75 °C/W
Junction-to-Ambient Thermal Resistance(2) 210
(1) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.
CSD22202W15 M0149-01_LPS266.gif
 Typ RθJA = 75°C/W when mounted on 1inch2 of 2 oz. Cu.
CSD22202W15 M0150-01_LPS266.gif
 Typ RθJA = 210°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD22202W15 graph01p2_LPS400.png
Figure 1. Transient Thermal Impedance
CSD22202W15 graph02_LPS400.png
Figure 2. Saturation Characteristics
CSD22202W15 graph04_LPS400.png
Figure 4. Gate Charge
CSD22202W15 graph06_LPS400.png
Figure 6. Threshold Voltage vs Temperature
CSD22202W15 graph08p2_LPS400.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD22202W15 graph10p2_LPS400.png
Figure 10. Maximum Safe Operating Area
CSD22202W15 graph12p2_LPS400.png
Figure 12. Maximum Drain Current vs Temperature
CSD22202W15 graph03_LPS400.png
Figure 3. Transfer Characteristics
CSD22202W15 graph05_LPS400.png
Figure 5. Capacitance
CSD22202W15 graph07p2_LPS400.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD22202W15 graph09p2_LPS400.png
Figure 9. Typical Diode Forward Voltage
CSD22202W15 graph11_LPS400.png
Figure 11. Single Pulse Unclamped Inductive Switching