ZHCSF65B July   2016  – March 2024 CSD19538Q2

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4.   说明
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 第三方产品免责声明
    2. 4.2 接收文档更新通知
    3. 4.3 支持资源
    4. 4.4 Trademarks
    5. 4.5 静电放电警告
    6. 4.6 术语表
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

3.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD19538Q2 Transient Thermal Impedance
Figure 3-1 Transient Thermal Impedance
CSD19538Q2 Saturation Characteristics
Figure 3-2 Saturation Characteristics
CSD19538Q2 Gate Charge
ID = 5AVDS = 50V
Figure 3-4 Gate Charge
CSD19538Q2 Threshold Voltage vs Temperature
ID = 250µA
Figure 3-6 Threshold Voltage vs Temperature
CSD19538Q2 Normalized On-State Resistance vs Temperature
ID = 5A
Figure 3-8 Normalized On-State Resistance vs Temperature
CSD19538Q2 Maximum Safe Operating Area
Single pulse, max RθJC = 6.2°C/W
Figure 3-10 Maximum Safe Operating Area
CSD19538Q2 Maximum Drain Current vs Temperature
Figure 3-12 Maximum Drain Current vs Temperature
CSD19538Q2 Transfer Characteristics
VDS = 5V
Figure 3-3 Transfer Characteristics
CSD19538Q2 Capacitance
Figure 3-5 Capacitance
CSD19538Q2 On-State Resistance vs Gate-to-Source Voltage
Figure 3-7 On-State Resistance vs Gate-to-Source Voltage
CSD19538Q2 Typical Diode Forward Voltage
Figure 3-9 Typical Diode Forward Voltage
CSD19538Q2 Single Pulse Unclamped Inductive Switching
Figure 3-11 Single Pulse Unclamped Inductive Switching