ZHCSCG4 May   2014 CSD19534Q5A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7机械封装和可订购信息
    1. 7.1 Q5A 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 布局
    3. 7.3 建议模板开口
    4. 7.4 Q5A 卷带信息

封装选项

机械数据 (封装 | 引脚)
  • DQJ|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.4 2.8 3.4 V
RDS(on) Drain-to-Source On Resistance VGS = 6 V, ID = 10 A 14.1 17.6
VGS = 10 V, ID = 10 A 12.6 15.1
gfs Transconductance VDS = 10 V, ID = 10 A 47 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 1290 1680 pF
Coss Output Capacitance 257 330 pF
Crss Reverse Transfer Capacitance 5.7 7.4 pF
RG Series Gate Resistance 1.1 2.2 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 10 A 17 22 nC
Qgd Gate Charge Gate to Drain 3.2 nC
Qgs Gate Charge Gate to Source 5.1 nC
Qg(th) Gate Charge at Vth 3.3 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 44 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 10 A, RG = 0 Ω
9 ns
tr Rise Time 14 ns
td(off) Turn Off Delay Time 20 ns
tf Fall Time 6 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 10 A, VGS = 0 V 0.8 1.0 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 10 A,
di/dt = 300 A/μs
134 nC
trr Reverse Recovery Time 53 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
PARAMETER MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance (1) 2.0 °C/W
RθJA Junction-to-Ambient Thermal Resistance(1)(2) 50
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu.
M0137-02_LPS198.gif
Max RθJA = 115°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01F_SLPS483.png
Figure 1. Transient Thermal Impedance
graph02_SLPS483.png
Figure 2. Saturation Characteristics
graph04F_SLPS483.png
ID = 10 A VDS = 50 V
Figure 4. Gate Charge
graph06F_SLPS483.png
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
graph08F_SLPS483.png
ID = 10 A
Figure 8. Normalized On-State Resistance vs Temperature
graph10F_SLPS483.png
Single Pulse Max RθJC = 2.0°C/W
Figure 10. Maximum Safe Operating Area
graph12_SLPS483.png
Figure 12. Maximum Drain Current vs Temperature
graph03F_SLPS483.png
VDS = 5 V
Figure 3. Transfer Characteristics
graph05p2_SLPS483.png
Figure 5. Capacitance
graph07_SLPS483.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS483.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS483.png
Figure 11. Single Pulse Unclamped Inductive Switching