ZHCSCP6A January   2014  – August 2014 CSD19501KCS

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7机械数据
    1. 7.1 KCS 封装尺寸

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 80 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.6 3.2 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 60 A 6.2 7.9 mΩ
VGS = 10 V, ID = 60 A 5.5 6.6 mΩ
gƒs Transconductance VDS = 8 V, ID = 60 A 137 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 3060 3980 pF
Coss Output Capacitance 784 1020 pF
Crss Reverse Transfer Capacitance 12.4 16.1 pF
RG Series Gate Resistance 1.3 2.6 Ω
Qg Gate Charge Total (10 V) VDS = 40 V, ID = 60 A 38 50 nC
Qgd Gate Charge Gate-to-Drain 5.8 nC
Qgs Gate Charge Gate-to-Source 12.4 nC
Qg(th) Gate Charge at Vth 7.5 nC
Qoss Output Charge VDS = 40 V, VGS = 0 V 98 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 60 A, RG = 0 Ω		 21 ns
tr Rise Time 15 ns
td(off) Turn Off Delay Time 39 ns
tƒ Fall Time 5 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 60 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 40 V, IF = 60 A,
di/dt = 300 A/μs		 230 nC
trr Reverse Recovery Time 74 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.7 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS478.png
Figure 1. Transient Thermal Impedance
graph02_SLPS478.png
Figure 2. Saturation Characteristics
graph03_SLPS478.png
Figure 3. Transfer Characteristics
graph04_SLPS478.png
Figure 4. Gate Charge
graph06_SLPS478.png
Figure 6. Threshold Voltage vs Temperature
graph08_SLPS478.png
Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS478A.png
Figure 10. Maximum Safe Operating Area
graph12_SLPS478.png
Figure 12. Maximum Drain Current vs Temperature
graph05p2_SLPS478.png
Figure 5. Capacitance
graph07_SLPS478.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS478.png
Figure 9. Typical Diode Forward Voltage
graph11_SLPS478.png
Figure 11. Single Pulse Unclamped Inductive Switching