SLPS684A July   2017  – June 2025 CSD18511KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Thermal Information
    2. 4.2 Electrical Characteristics
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

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4.2 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0V, ID = 250μA 40 V
IDSS Drain-to-source leakage current VGS = 0V, VDS = 32V 1 μA
IGSS Gate-to-source leakage current VDS = 0V, VGS = 20V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250μA 1.5 1.8 2.4 V
RDS(on) Drain-to-source on-resistance VGS = 4.5V, ID = 100A 3.2 4.2 mΩ
VGS = 10V, ID = 100A 2.1 2.6
gfs Transconductance VDS = 4V, ID = 100A 249 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0V, VDS = 20V, ƒ = 1MHz 4570 5940 pF
Coss Output capacitance 454 591 pF
Crss Reverse transfer capacitance 235 306 pF
RG Series gate resistance 0.9 1.8 Ω
Qg Gate charge total (4.5V) VDS = 20V, ID = 100A 31 nC
Qg Gate charge total (10V) 64 nC
Qgd Gate charge gate-to-drain 9.7 nC
Qgs Gate charge gate-to-source 17.9 nC
Qg(th) Gate charge at Vth 7.4 nC
Qoss Output charge VDS = 20V, VGS = 0V 20.7 nC
td(on) Turnon delay time VDS = 20V, VGS = 10V,
IDS = 100A, RG = 0Ω		 8 ns
tr Rise time 6 ns
td(off) Turnoff delay time 17 ns
tf Fall time 3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100A, VGS = 0V 0.9 1.0 V
Qrr Reverse recovery charge VDS= 20V, IF = 100A,
di/dt = 300A/μs		 62 nC
trr Reverse recovery time 31 ns