SLPS684A July   2017  – June 2025 CSD18511KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Thermal Information
    2. 4.2 Electrical Characteristics
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

3 Description

This 40V, 2.1mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18511KTT
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10V) 63.9 nC
Qgd Gate Charge Gate-to-Drain 9.7 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5V 3.2 mΩ
VGS = 10V 2.1
VGS(th) Threshold Voltage 1.8 V
Device Information
DEVICE QTY MEDIA PACKAGE(1) SHIP
CSD18511KTT 500 13-Inch Reel D2PAK
Plastic Package		 Tape and Reel
CSD18511KTTT 50
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 110 A
Continuous Drain Current (Silicon Limited), TC = 25°C 194
Continuous Drain Current (Silicon Limited), TC = 100°C 137
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 188 W
TJ,
Tstg		 Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 56A, L = 0.1mH, RG = 25Ω		 156 mJ
(1) For all available packages, see the orderable addendum at the end of the data sheet.
CSD18511KTT RDS(on) vs VGSRDS(on) vs VGS
CSD18511KTT Gate ChargeGate Charge