ZHCS977E June   2012  – September 2014 CSD18504Q5A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械封装和可订购信息
    1. 7.1 Q5A 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 布局
    3. 7.3 建议模板开口
    4. 7.4 Q5A 卷带信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.5 1.9 2.4 V
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, ID = 17 A 7.5 9.8 mΩ
VGS = 10 V, ID = 17 A 5.3 6.6 mΩ
gƒs Transconductance VDS = 20 V, ID = 17 A 71 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 1380 1656 pF
Coss Output Capacitance 310 372 pF
Crss Reverse Transfer Capacitance 8 9.6 pF
RG Series Gate Resistance 1.4 2.8 Ω
Qg Gate Charge Total (4.5 V) VDS = 20 V, ID = 17 A 7.7 9.2 nC
Qg Gate Charge Total (10 V) 16 19
Qgd Gate Charge Gate-to-Drain 2.4 nC
Qgs Gate Charge Gate-to-Source 3.2 nC
Qg(th) Gate Charge at Vth 2.2 nC
Qoss Output Charge VDS = 20 V, VGS = 0 V 21 nC
td(on) Turn On Delay Time VDS = 20 V, VGS = 10 V,
IDS = 17 A, RG = 0 Ω 		3.2 ns
tr Rise Time 6.8 ns
td(off) Turn Off Delay Time 12 ns
tƒ Fall Time 2 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 17 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 20 V, IF = 17 A,
di/dt = 300 A/μs 		39 nC
trr Reverse Recovery Time 28 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance(1) 2.0 °C/W
RθJA Junction-to-Ambient Thermal Resistance(1)(2) 50
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
CSD18504Q5A M0137-01_LPS198.gif
 Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick) Cu.
CSD18504Q5A M0137-02_LPS198.gif
 Max RθJA = 125°C/W when mounted on a minimum pad area of
2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18504Q5A graph01_SLPS366D.png
Figure 1. Transient Thermal Impedance
CSD18504Q5A graph02_SLPS366.png
Figure 2. Saturation Characteristics
CSD18504Q5A graph04_SLPS366.png
Figure 4. Gate Charge
CSD18504Q5A graph06_SLPS366.png
Figure 6. Threshold Voltage vs Temperature
CSD18504Q5A graph08_SLPS366.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD18504Q5A graph10_SLPS366E.png
Figure 10. Maximum Safe Operating Area
CSD18504Q5A graph12_SLPS366.png
Figure 12. Maximum Drain Current vs Temperature
CSD18504Q5A graph03_SLPS366.png
Figure 3. Transfer Characteristics
CSD18504Q5A graph05p2_SLPS366.png
Figure 5. Capacitance
CSD18504Q5A graph07_SLPS366.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18504Q5A graph09_SLPS366.png
Figure 9. Typical Diode Forward Voltage
CSD18504Q5A graph11_SLPS366.png
Figure 11. Single Pulse Unclamped Inductive Switching