SLPS243G July   2010  – January 2017 CSD17507Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQJ|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 1.1 1.6 2.1 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, IDS = 11 A 11.8 16.1 mΩ
VGS = 10 V, IDS = 11 A 9.0 10.8
gfs Transconductance VDS = 15 V, IDS = 11 A 44 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		 410 530 pF
Coss Output capacitance 270 350 pF
Crss Reverse transfer capacitance 23 30 pF
RG Series gate resistance 0.7 1.4 Ω
Qg Gate charge total (4.5 V) VDS = 15 V, IDS = 11 A 2.8 3.6 nC
Qgd Gate charge gate-to-drain 0.7 nC
Qgs Gate charge gate-to-source 1.3 nC
Qg(th) Gate charge at Vth 0.7 nC
Qoss Output charge VDS = 13 V, VGS = 0 V 7.2 nC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V,
IDS = 11 A, RG = 2 Ω		 4.7 ns
tr Rise time 5.2 ns
td(off) Turnoff delay time 5.7 ns
tf Fall time 2.3 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 11 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDS= 13 V, IF = 11 A, di/dt = 300 A/μs 11 nC
trr Reverse recovery time 16 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
PARAMETER MIN TYP MAX UNIT
RθJC Thermal resistance junction-to-case(1) 2.1 °C/W
RθJA Thermal resistance junction-to-ambient(1)(2) 50 °C/W
(1) RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
CSD17507Q5A M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu.
CSD17507Q5A M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD17507Q5A D001_SLPS243.png
Figure 1. Transient Thermal Impedance
CSD17507Q5A D002_SLPS243E.gif
Figure 2. Saturation Characteristics
CSD17507Q5A D004_SLPS243E.gif
ID = 11 A VDS = 15 V
Figure 4. Gate Charge
CSD17507Q5A D006_SLPS243E.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD17507Q5A D008_SLPS243.gif
ID = 11 A, VGS = 10 V
Figure 8. Normalized On-State Resistance vs Temperature
CSD17507Q5A D010_SLPS243.gif
Single pulse, max RθJC = 2.1°C/W
Figure 10. Maximum Safe Operating Area
CSD17507Q5A D012_SLPS243.gif
Figure 12. Maximum Drain Current vs Temperature
CSD17507Q5A D003_SLPS243E.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD17507Q5A D005_SLPS243E.gif
Figure 5. Capacitance
CSD17507Q5A D007_SLPS243E.gif
ID = 11 A
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD17507Q5A D009_SLPS243E.gif
Figure 9. Typical Diode Forward Voltage
CSD17507Q5A D011_SLPS243.gif
Figure 11. Single Pulse Unclamped Inductive Switching