ZHCSTH5B October 2009 – October 2023 CSD16408Q5
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Static Characteristics | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 25 | V | |||
| IDSS | Drain-to-source leakage | VGS = 0 V, VDS = 20 V | 1 | μA | |||
| IGSS | Gate-to-source leakage | VDS = 0 V, VGS = –12 V to 16 V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 1.4 | 1.8 | 2.1 | V | |
| rDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, ID = 25 A | 5.4 | 6.8 | mΩ | ||
| VGS = 10 V, ID = 25 A | 3.6 | 4.5 | mΩ | ||||
| gfs | Transconductance | VDS = 15 V, ID = 25 A | 60 | S | |||
| Dynamic Characteristics | |||||||
| CISS | Input capacitance | VGS = 0 V, VDS = 12.5 V , ƒ = 1 MHz | 990 | 1300 | pF | ||
| COSS | Output capacitance | 760 | 1000 | pF | |||
| CRSS | Reverse transfer capacitance | 75 | 100 | pF | |||
| Rg | Series gate resistance | 0.8 | 1.6 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 12.5 V, ID = 25 A | 6.7 | 8.9 | nC | ||
| Qgd | Gate charge, gate-to-drain | 1.9 | nC | ||||
| Qgs | Gate charge, gate-to-source | 3.1 | nC | ||||
| Qg(th) | Gate charge at Vth | 1.8 | nC | ||||
| QOSS | Output charge | VDS = 13 V, VGS = 0 V | 15.7 | nC | |||
| td(on) | Turnon delay time | VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω |
11.3 | ns | |||
| tr | Rise time | 25 | ns | ||||
| td(off) | Turnoff delay time | 11 | ns | ||||
| tf | Fall time | 10.8 | ns | ||||
| Diode Characteristics | |||||||
| VSD | Diode forward voltage | IS = 25 A, VGS = 0 V | 0.8 | 1 | V | ||
| Qrr | Reverse recovery charge | VDD = 13 V, IF = 2 5A, di/dt = 300 A/μs | 17 | nC | |||
| trr | Reverse recovery time | VDD = 13 V, IF = 25 A, di/dt = 300 A/μs | 21 | ns | |||