SLPS202B August   2009  – December 2015 CSD16406Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +16/–12 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.4 1.8 2.2 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, ID = 20 A 5.9 7.4 mΩ
VGS = 10 V, ID = 20 A 4.2 5.3 mΩ
gfs Transconductance VDS = 15 V, ID = 20 A 53 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 840 1100 pF
COSS Output capacitance 680 950 pF
CRSS Reverse transfer capacitance 57 80 pF
Rg Series gate resistance 1.2 2.4 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 20 A 5.8 8.1 nC
Qgd Gate charge gate to drain 1.5 nC
Qgs Gate charge gate to source 2.5 nC
Qg(th) Gate charge at Vth 1.5 nC
QOSS Output charge VDS = 13.6 V, VGS = 0 V 13.9 nC
td(on) Turn on delay time VDS = 12.5 V, VGS = 4.5 V ID = 20 A
RG = 2 Ω		 7.3 ns
tr Rise time 12.9 ns
td(off) Turn off delay time 8.5 ns
tf Fall time 4.8 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 20 A, VGS = 0 V 0.85 1.0 V
Qrr Reverse recovery charge VDD = 13.6 V, IF = 20 A, di/dt = 300 A/μs 18 nC
trr Reverse recovery time VDD = 13.6 V, IF = 20 A, di/dt = 300 A/μs 22 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance (1) 2.7 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
CSD16406Q3 m0161-01_lps202.gif
Max RθJA = 55°C/W when mounted on 1 inch2 of 2 oz. Cu.
CSD16406Q3 m0161-02_lps202.gif
Max RθJA = 160°C/W when mounted on minimum pad area of 2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD16406Q3 D001_SLPS202.png
Figure 1. Transient Thermal Impedance
CSD16406Q3 D002_SLPS202.gif
Figure 2. Saturation Characteristics
CSD16406Q3 D004_SLPS202.gif
ID = 20 A VDS = 12.5 V
Figure 4. Gate Charge
CSD16406Q3 D006_SLPS202.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD16406Q3 D008_SLPS202.gif
ID = 20 A VGS = 10 V
Figure 8. Normalized On-Resistance vs Temperature
CSD16406Q3 D010_SLPS202.gif
Single Pulse, Max RθJC = 2.7°C/W
Figure 10. Maximum Safe Operating Area
CSD16406Q3 D012_SLPS202.gif
Figure 12. Maximum Drain Current vs Temperature
CSD16406Q3 D003_SLPS202.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD16406Q3 D005_SLPS202.gif
Figure 5. Capacitance
CSD16406Q3 D007_SLPS202.gif
Figure 7. On Resistance vs Gate Voltage
CSD16406Q3 D009_SLPS202.gif
Figure 9. Typical Diode Forward Voltage
CSD16406Q3 D011_SLPS202.gif
Figure 11. Single Pulse Unclamped Inductive Switching