SLPS247E December   2009  – August 2014 CSD16340Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA 25 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = +10/–8 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 0.6 0.85 1.1 V
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V, IDS = 20 A 6.1 7.8 mΩ
VGS = 4.5 V, IDS = 20 A 4.3 5.5 mΩ
VGS = 8 V, IDS = 20 A 3.8 4.5 mΩ
gƒs Transconductance VDS = 15 V, IDS = 20 A 121 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz 1050 1350 pF
COSS Output Capacitance 730 950 pF
CRSS Reverse Transfer Capacitance 53 69 pF
Rg Series Gate Resistance 1.5 3 Ω
Qg Gate Charge Total (4.5 V) VDS = 12.5 V, ID = 20 A 6.5 9.2 nC
Qgd Gate Charge Gate-to-Drain 1.2 nC
Qgs Gate Charge Gate-to-Source 2.1 nC
Qg(th) Gate Charge at Vth 1 nC
QOSS Output Charge VDS = 13 V, VGS = 0 V 15 nC
td(on) Turn On Delay Time VDS = 12.5 V, VGS = 4.5 V, ID = 20 A
RG = 2 Ω		 4.8 ns
tr Rise Time 16.1 ns
td(off) Turn Off Delay Time 13.8 ns
tƒ Fall Time 5.2 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = 20 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDD = 13 V, IF = 20 A, di/dt = 300 A/μs 14.5 nC
trr Reverse Recovery Time 20 ns

5.2 Thermal Information

THERMAL METRIC(1)(2) CSD16340Q3 UNITS
Q3 (8 PINS)
θJA Junction-to-Ambient Thermal Resistance 42.0 °C/W
θJCtop Junction-to-Case (top) Thermal Resistance 20.6
θJB Junction-to-Board Thermal Resistance 8.8
ψJT Junction-to-Top Characterization Parameter 0.3
ψJB Junction-to-Board Characterization Parameter 8.7
θJCbot Junction-to-Case (bottom) Thermal Resistance 0.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
m0161-01_lps202.gif
 Max RθJA = 58°C/W when mounted on
1 inch2 of 2 oz. Cu.
m0161-02_lps202.gif
 Max RθJA = 162°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
g012_lps247.gif
Figure 1. Transient Thermal Impedance
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Figure 2. Saturation Characteristics
G003_lps247.gif
Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs Temperature
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Figure 8. Normalized On Resistance vs Temperature
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Figure 10. Maximum Safe Operating Area
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Figure 12. Maximum Drain Current vs Temperature
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Figure 3. Transfer Characteristics
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Figure 5. Capacitance
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Figure 7. On-Resistance vs Gate Voltage
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Figure 9. Typical Diode Forward Voltage
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Figure 11. Single Pulse Unclamped Inductive Switching