ZHCSPQ4E January   1998  – October 2022 CD54HC540 , CD54HC541 , CD54HCT541 , CD74HC540 , CD74HC541 , CD74HCT540 , CD74HCT541

PRODUCTION DATA  

  1. 特性
  2. 说明
  3. Revision History
  4. Pin Configuration and Functions
  5. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics
  6. Parameter Measurement Information
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • N|20
  • DW|20
  • PW|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

PARAMETER TEST CONDITIONS(2) VCC(V) 25℃ –40℃ to 85℃ –55℃ to 125℃ UNIT
MIN TYP MAX MIN MAX MIN MAX
HC TYPES
VIH High level input voltage 2 1.5 1.5 1.5 V
4.5 3.15 3.15 3.15
6 4.2 4.2 4.2
VIL Low level input voltage 2 0.5 0.5 0.5 V
4.5 1.35 1.35 1.35
6 1.8 1.8 1.8
VOH

High level output voltage

CMOS loads

IOH = – 20 μA 2 1.9 1.9 1.9 V
IOH = – 20 μA 4.5 4.4 4.4 4.4
IOH = – 20 μA 6 5.9 5.9 5.9

High level output voltage

TTL loads

IOH = – 6 mA 4.5 3.98 3.84 3.7
IOH = – 7.8 mA 6 5.48 5.34 5.2
VOL

Low level output voltage

CMOS loads

IOL = 20 μA 2 0.1 0.1 0.1 V
IOL = 20 μA 4.5 0.1 0.1 0.1
IOL = 20 μA 6 0.1 0.1 0.1

Low level output voltage

TTL loads

IOL = 6 mA 4.5 0.26 0.33 0.4
IOL = 7.8 mA 6 0.26 0.33 0.4
II Input leakage current VI = VCC or GND 6 ±0.1 ±1 ±1 μA
ICC Quiescent device current VI = VCC or GND 6 8 80 160 μA
IOZ Three-state leakage current VO = VCC or GND 6 ±0.5 ±5.0 ±10 μA
HCT TYPES
VIH High level input voltage 4.5 to 5.5 2 2 2 V
VIL Low level input voltage 4.5 to 5.5 0.8 0.8 0.8 V
VOH

High level output voltage

CMOS loads

VOH = – 20 μA 4.5 4.4 4.4 4.4 V

High level output voltage

TTL loads

VOH = – 6 mA 4.5 3.98 3.84 3.7
VOL

Low level output voltage

CMOS loads

VOL = 20 μA 4.5 0.1 0.1 0.1 V

Low level output voltage

TTL loads

VOL = 6 mA 4.5 0.26 0.33 0.4
II Input leakage current VI = VCC and GND 5.5 ±0.1 ±1 ±1 μA
ICC Quiescent device current VI = VCC and GND 5.5 8 80 160 μA
IOZ Three-state leakage current VO = VCC or GND 5.5 ±0.5 ±5.0 ±10 μA
ΔICC(1) HCT540
Additional quiescent device current per input pin
A0 - A7 inputs held at VCC–2.1 4.5 to 5.5 100 360 450 490 μA
OE2 input held at VCC–2.1 4.5 to 5.5 100 270 337.5 367.5 μA
OE1 input held at VCC–2.1 4.5 to 5.5 100 414 517.5 563.5 μA
HCT541
Additional quiescent device current per input pin
A0 - A7 inputs held at VCC–2.1 4.5 to 5.5 100 144 180 196 μA
OE2 input held at VCC–2.1 4.5 to 5.5 100 270 337.5 367.5 μA
OE1 input held at VCC–2.1 4.5 to 5.5 100 414 517.5 563.5 μA
For dual-supply systems theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specification is 1.8mA.
VI = VIH or VOL, unless otherwise noted.