ZHCSPR7E November 1998 – October 2022 CD54HC374 , CD54HC574 , CD54HCT374 , CD54HCT574 , CD74HC374 , CD74HC574 , CD74HCT374 , CD74HCT574
PRODUCTION DATA
PARAMETER | TEST CONDITIONS(2) | VCC (V) | 25℃ | –40℃ to 85℃ | –55℃ to 125℃ | UNIT | |||||
---|---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | MAX | MIN | MAX | |||||
HC TYPES | |||||||||||
VIH | High level input voltage | 2 | 1.5 | 1.5 | 1.5 | V | |||||
4.5 | 3.15 | 3.15 | 3.15 | ||||||||
6 | 4.2 | 4.2 | 4.2 | ||||||||
VIL | Low level input voltage | 2 | 0.5 | 0.5 | 0.5 | V | |||||
4.5 | 1.35 | 1.35 | 1.35 | ||||||||
6 | 1.8 | 1.8 | 1.8 | ||||||||
VOH |
High level output voltage CMOS loads |
IOH = – 20 μA | 2 | 1.9 | 1.9 | 1.9 | V | ||||
IOH = – 20 μA | 4.5 | 4.4 | 4.4 | 4.4 | |||||||
IOH = – 20 μA | 6 | 5.9 | 5.9 | 5.9 | |||||||
High level output voltage TTL loads |
IOH = – 6 mA | 4.5 | 3.98 | 3.84 | 3.7 | V | |||||
IOH = –7.8 mA | 6 | 5.48 | 5.34 | 5.2 | |||||||
VOL |
Low level output voltage CMOS loads |
IOL = 20 μA | 2 | 0.1 | 0.1 | 0.1 | V | ||||
IOL = 20 μA | 4.5 | 0.1 | 0.1 | 0.1 | |||||||
IOL = 20 μA | 6 | 0.1 | 0.1 | 0.1 | |||||||
Low level output voltage TTL loads |
IOL = 6 mA | 4.5 | 0.26 | 0.33 | 0.4 | V | |||||
IOL = 7.8 mA | 6 | 0.26 | 0.33 | 0.4 | |||||||
II | Input leakage current | VI = VCC or GND | 6 | ±0.1 | ±1 | ±1 | μA | ||||
ICC | Quiescent device current | VI = VCC or GND | 6 | 8 | 80 | 160 | μA | ||||
VIL or VIH | Three-state leakage current | VO = VCCor GND | 6 | ±0.5 | ±5.0 | ±10 | μA | ||||
HCT TYPES | |||||||||||
VIH | High level input voltage | 4.5 to 5.5 | 2 | 2 | 2 | V | |||||
VIL | Low level input voltage | 4.5 to 5.5 | 0.8 | 0.8 | 0.8 | V | |||||
VOH |
High level output voltage CMOS loads |
IOH = – 20 μA | 4.5 | 4.4 | 4.4 | 4.4 | V | ||||
High level output voltage TTL loads |
IOH = – 6 mA | 4.5 | 3.98 | 3.84 | 3.7 | ||||||
VOL |
Low level output voltage CMOS loads |
IOL = 20 μA | 4.5 | 0.1 | 0.1 | 0.1 | V | ||||
Low level output voltage TTL loads |
IOL = 6 mA | 4.5 | 0.26 | 0.33 | 0.4 | ||||||
II | Input leakage current | VI = VCC or GND | 5.5 | ±0.1 | ±1 | ±1 | μA | ||||
ICC | Quiescent device current | VI = VCC or GND | 5.5 | 8 | 80 | 160 | μA | ||||
VIL or VIH | Three-state leakage current | VO = VCCor GND | 6 | ±0.5 | ±5.0 | ±10 | μA | ||||
ΔICC(1) | HCT374 Additional quiescent device current per input pin |
D0 - D7 inputs held at VCC – 2.1 | 4.5 to 5.5 | 100 | 108 | 135 | 147 | μA | |||
CP input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 324 | 405 | 441 | μA | |||||
OE input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 468 | 585 | 637 | μA | |||||
HCT574 Additional quiescent device current per input pin |
D0 - D7 inputs held at VCC – 2.1 | 4.5 to 5.5 | 100 | 144 | 180 | 196 | μA | ||||
CP input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 270 | 337.5 | 367.5 | μA | |||||
OE input held at VCC – 2.1 | 4.5 to 5.5 | 100 | 216 | 270 | 294 | μA |