ZHCSCZ3A July   2014  – November 2015 CC2540T

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能方框图
  2. 2修订历史记录
  3. 3Terminal Configuration and Functions
    1. 3.1 Pin Attributes
  4. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  ESD Ratings
    3. 4.3  Recommended Operating Conditions
    4. 4.4  Electrical Characteristics
    5. 4.5  Thermal Resistance Characteristics for RHA Package
    6. 4.6  General Characteristics
    7. 4.7  RF Receive Section
    8. 4.8  RF Transmit Section
    9. 4.9  Current Consumption With TPS62730
    10. 4.10 32-MHz Crystal Oscillator
    11. 4.11 32.768-kHz Crystal Oscillator
    12. 4.12 32-kHz RC Oscillator
    13. 4.13 16-MHz RC Oscillator
    14. 4.14 RSSI Characteristics
    15. 4.15 Frequency Synthesizer Characteristics
    16. 4.16 Analog Temperature Sensor
    17. 4.17 Comparator Characteristics
    18. 4.18 ADC Characteristics
    19. 4.19 Control Input AC Characteristics
    20. 4.20 SPI AC Characteristics
    21. 4.21 Debug Interface AC Characteristics
    22. 4.22 Timer Inputs AC Characteristics
    23. 4.23 DC Characteristics
    24. 4.24 Typical Characteristics
    25. 4.25 Typical Current Savings
  5. 5Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
    3. 5.3 Block Descriptions
      1. 5.3.1 CPU and Memory
      2. 5.3.2 Peripherals
  6. 6Applications, Implementation, and Layout
    1. 6.1 Application Information
    2. 6.2 Input/Output Matching
    3. 6.3 Crystal
    4. 6.4 On-Chip 1.8-V Voltage Regulator Decoupling
    5. 6.5 Power-Supply Decoupling and Filtering
    6. 6.6 Reference Design
  7. 7器件和文档支持
    1. 7.1 文档支持
      1. 7.1.1 相关文档
      2. 7.1.2 社区资源
    2. 7.2 德州仪器 (TI) 低功耗射频网站
    3. 7.3 德州仪器 (TI) 低功耗射频开发者网络
    4. 7.4 低功耗射频电子新闻简报
    5. 7.5 商标
    6. 7.6 静电放电警告
    7. 7.7 出口管制提示
    8. 7.8 Glossary
  8. 8机械、封装和可订购信息
    1. 8.1 封装信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Specifications

4.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage All supply pins must have the same voltage –0.3 3.9 V
Voltage on any digital pin –0.3 VDD + 0.3,
≤ 3.9		 V
Input RF level 10 dBm
Tstg Storage temperature –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.

4.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge (ESD) performance Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±2000 V
Charged Device Model (CDM),
per JESD22-C101(2)		 All pins ±750 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating ambient temperature range, TA –40 125 °C
Operating supply voltage 2 3.6 V

4.4 Electrical Characteristics

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Icore Core current consumption Power mode 1. Digital regulator on; 16-MHz RCOSC and 32-MHz crystal oscillator off; 32.768-kHz XOSC, POR, BOD and sleep timer active; RAM and register retention 235 µA
Power mode 2. Digital regulator off; 16-MHz RCOSC and 32-MHz crystal oscillator off; 32.768-kHz XOSC, POR, and sleep timer active; RAM and register retention 0.9
Power mode 3. Digital regulator off; no clocks; POR active; RAM and register retention 0.4
Low MCU activity: 32-MHz XOSC running. No radio or peripherals. No flash access, no RAM access. 6.7 mA
Iperi Peripheral current consumption(1) Timer 1. Timer running, 32-MHz XOSC used 90 µA
Timer 2. Timer running, 32-MHz XOSC used 90
Timer 3. Timer running, 32-MHz XOSC used 60
Timer 4. Timer running, 32-MHz XOSC used 70
Sleep timer, including 32.753-kHz RCOSC 0.6
ADC, when converting 1.2 mA
(1) Adds to core current Icore for each peripheral unit activated.

4.5 Thermal Resistance Characteristics for RHA Package

NAME DESCRIPTION °C/W(1)(2) AIR FLOW (m/s)(3)
RΘJC Junction-to-case 16.1 0.00
RΘJB Junction-to-board 5.5 0.00
RΘJA Junction-to-free air 30.6 0.00
RΘJMA Junction-to-moving air 0.2 0.00
PsiJT Junction-to-package top 5.4 0.00
PsiJB Junction-to-board 1.0 0.00
(1) °C/W = degrees Celsius per watt.
(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.
(3) m/s = meters per second.

4.6 General Characteristics

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
WAKE-UP AND TIMING
Power mode 1 → Active Digital regulator on, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of 16-MHz RCOSC 4 µs
Power mode 2 or 3 → Active Digital regulator off, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of regulator and 16-MHz RCOSC 120 µs
Active → TX or RX Crystal ESR = 16 Ω. Initially running on 16-MHz RCOSC, with 32-MHz XOSC OFF 410 µs
With 32-MHz XOSC initially on 160 µs
RX/TX turnaround 150 µs
RADIO PART
RF frequency range Programmable in 2-MHz steps 2402 2480 MHz
Data rate and modulation format 1 Mbps, GFSK, 250-kHz deviation

4.7 RF Receive Section

Measured on the TI CC2540 EM reference design with TA = 25°C, VDD = 3 V, fc = 2440 MHz
1 Mbps, GFSK, 250-kHz deviation, Bluetooth low energy mode, and 0.1% BER(4).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity(5) High-gain mode   –93 dBm
Receiver sensitivity(5) Standard mode –87 dBm
Saturation(1) 6 dBm
Co-channel rejection(1) –5 dB
Adjacent-channel rejection(1) ±1 MHz –5 dB
Alternate-channel rejection(1) ±2 MHz 30 dB
Blocking(1) –30 dBm
Frequency error tolerance(2) Including both initial tolerance and drift –250 250 kHz
Symbol rate error tolerance(3) –80 80 ppm
Spurious emission. Only largest spurious emission stated within each band. Conducted measurement with a 50-Ω single-ended load. Complies with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66 –75 dBm
Current consumption RX mode, standard mode, no peripherals active, low MCU activity, MCU at 250 kHz 19.6 mA
RX mode, high-gain mode, no peripherals active, low MCU activity, MCU at 250 kHz 22.1
RX mode, high-gain mode, no peripherals active, low MCU activity, MCU at 250 kHz;
TA = –40°C to 125°C, VDD = 2 V to 3.6 V, and fc = 2402 MHz to 2480 MHz		 30.5
(1) Results based on standard gain mode
(2) Difference between center frequency of the received RF signal and local oscillator frequency
(3) Difference between incoming symbol rate and the internally generated symbol rate
(4) 0.1% BER maps to 30.8% PER
(5) The receiver sensitivity setting is programmable using a TI BLE stack vendor-specific API command. The default value is standard mode.

4.8 RF Transmit Section

Measured on the TI CC2540 EM reference design with TA = 25°C, VDD = 3 V and fc = 2440 MHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power Delivered to a single-ended 50-Ω load through a balun using maximum recommended output power setting 1 4 dBm
Delivered to a single-ended 50-Ω load through a balun using minimum recommended output power setting –23
Programmable output power range Delivered to a single-ended 50 Ω load through a balun 27 dB
Spurious emissions Conducted measurement with a 50-Ω single-ended load. Complies with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66(1) –41 dBm
Current consumption TX mode, –23-dBm output power, no peripherals active, low MCU activity, MCU at 250 kHz 21.1 mA
TX mode, –6-dBm output power, no peripherals active, low MCU activity, MCU at 250 kHz 23.8
TX mode, 0-dBm output power, no peripherals active, low MCU activity, MCU at 250 kHz 27
TX mode, 4-dBm output power, no peripherals active, low MCU activity, MCU at 250 kHz 31.6
TX mode, 4-dBm output power, no peripherals active, low MCU activity, MCU at 250 kHz;
TA = –40°C to 125°C, VDD = 2 V to 3.6 V, and fc = 2402 MHz to
2480 MHz		 39.6
Optimum load impedance Differential impedance as seen from the RF port (RF_P and RF_N) toward the antenna 70 + j30 Ω
(1) Designs with antenna connectors that require conducted ETSI compliance at 64 MHz should insert an LC resonator in front of the antenna connector. Use a 1.6-nH inductor in parallel with a 1.8-pF capacitor. Connect both from the signal trace to a good RF ground.

4.9 Current Consumption With TPS62730

Measured on the TI CC2540TPS62730 EM reference design with TA = 25°C, VDD = 3 V, and fc = 2440 MHZ.
1 Mbps, GFSK, 250-kHz deviation, Bluetooth low energy mode, 1% BER(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current consumption RX mode, standard mode, no peripherals active, low MCU activity,
MCU at 1 MHZ		 15.8 mA
RX mode, high-gain mode, no peripherals active, low MCU activity,
MCU at 1 MHZ		 17.8
TX mode, –23-dBm output power, no peripherals active, low MCU activity,
MCU at 1 MHZ		 16.5
TX mode, –6-dBm output power, no peripherals active, low MCU activity,
MCU at 1 MHZ		 18.6
TX mode, 0-dBm output power, no peripherals active, low MCU activity,
MCU at 1 MHZ		 21
TX mode, 4-dBm output power, no peripherals active, low MCU activity,
MCU at 1 MHZ		 24.6
(1) 0.1% BER maps to 30.8% PER

4.10 32-MHz Crystal Oscillator

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32 MHz
Crystal frequency accuracy requirement(1) –40 40 ppm
ESR Equivalent series resistance 6 60 Ω
C0 Crystal shunt capacitance 1 7 pF
CL Crystal load capacitance 10 16 pF
Start-up time 0.25 ms
Power-down guard time The crystal oscillator must be in power down for a guard time before it is used again. This requirement is valid for all modes of operation. The need for power-down guard time can vary with crystal type and load. 3 ms
(1) Including aging and temperature dependency, as specified by [1]

4.11 32.768-kHz Crystal Oscillator

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32.768 kHz
Crystal frequency accuracy requirement(1) –40 40 ppm
ESR Equivalent series resistance 40 130 kΩ
C0 Crystal shunt capacitance 0.9 2 pF
CL Crystal load capacitance 12 16 pF
Start-up time 0.4 s
(1) Including aging and temperature dependency, as specified by [1]

4.12 32-kHz RC Oscillator

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Calibrated frequency(1) 32.753 kHz
Frequency accuracy after calibration ±0.2%
Temperature coefficient(2) 0.4 %/°C
Supply-voltage coefficient(3) 3 %/V
Calibration time(4) 2 ms
(1) The calibrated 32-kHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 977.
(2) Frequency drift when temperature changes after calibration
(3) Frequency drift when supply voltage changes after calibration
(4) When the 32-kHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator is performed while SLEEPCMD.OSC32K_CALDIS is set to 0.

4.13 16-MHz RC Oscillator

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency(1) 16 MHz
Uncalibrated frequency accuracy ±18%
Calibrated frequency accuracy ±0.6%
Start-up time 10 µs
Initial calibration time(2) 50 µs
(1) The calibrated 16-MHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 2.
(2) When the 16-MHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator is performed while SLEEPCMD.OSC_PD is set to 0.

4.14 RSSI Characteristics

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Useful RSSI range(1) High-gain mode –99 to –44 dBm
Standard mode –90 to –35
Absolute uncalibrated RSSI accuracy(1) High-gain mode ±4 dB
Step size (LSB value) 1 dB
(1) Assuming CC2540 EM reference design. Other RF designs give an offset from the reported value.

4.15 Frequency Synthesizer Characteristics

Measured on the TI CC2540 EM reference design with TA = 25°C, VDD = 3 V and fc = 2440 MHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Phase noise, unmodulated carrier At ±1-MHz offset from carrier –109 dBc/Hz
At ±3-MHz offset from carrier –112
At ±5-MHz offset from carrier –119

4.16 Analog Temperature Sensor

Measured on the TI CC2540 EM reference design with TA = 25°C and VDD = 3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output Measured using integrated ADC, internal band-gap voltage reference, and maximum resolution 1480 12-bit
Temperature coefficient 4.5 / 1°C
Voltage coefficient 1 / 0.1 V
Initial accuracy without calibration ±10 °C
Accuracy using 1-point calibration ±5 °C
Current consumption when enabled 0.5 mA

4.17 Comparator Characteristics

TA = 25°C, VDD = 3 V. All measurement results are obtained using the CC2540T reference designs, post-calibration.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Common-mode maximum voltage VDD V
Common-mode minimum voltage –0.3
Input offset voltage 1 mV
Offset versus temperature 16 µV/°C
Offset versus operating voltage 4 mV/V
Supply current 230 nA
Hysteresis 0.15 mV

4.18 ADC Characteristics

TA = 25°C and VDD = 3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage VDD is voltage on AVDD5 pin 0 VDD V
External reference voltage VDD is voltage on AVDD5 pin 0 VDD V
External reference voltage differential VDD is voltage on AVDD5 pin 0 VDD V
Input resistance, signal Simulated using 4-MHz clock speed 197 kΩ
Full-scale signal(1) Peak-to-peak, defines 0 dBFS 2.97 V
ENOB(1) Effective number of bits Single-ended input, 7-bit setting 5.7 bits
Single-ended input, 9-bit setting 7.5
Single-ended input, 10-bit setting 9.3
Single-ended input, 12-bit setting 10.3
Differential input, 7-bit setting 6.5
Differential input, 9-bit setting 8.3
Differential input, 10-bit setting 10
Differential input, 12-bit setting 11.5
10-bit setting, clocked by RCOSC 9.7
12-bit setting, clocked by RCOSC 10.9
Useful power bandwidth 7-bit setting, both single and differential 0–20 kHz
THD Total harmonic distortion Single ended input, 12-bit setting, –6 dBFS(1) –75.2 dB
Differential input, 12-bit setting, –6 dBFS(1) –86.6
Signal to nonharmonic ratio Single-ended input, 12-bit setting(1) 70.2 dB
Differential input, 12-bit setting(1) 79.3
Single-ended input, 12-bit setting, –6 dBFS(1) 78.8
Differential input, 12-bit setting, –6 dBFS(1) 88.9
CMRR Common-mode rejection ratio Differential input, 12-bit setting, 1-kHz sine (0 dBFS), limited by ADC resolution >84 dB
Crosstalk Single ended input, 12-bit setting, 1-kHz sine (0 dBFS), limited by ADC resolution >84 dB
Offset Midscale –3 mV
Gain error 0.68%
DNL Differential nonlinearity 12-bit setting, mean(1) 0.05 LSB
12-bit setting, maximum(1) 0.9
INL Integral nonlinearity 12-bit setting, mean(1) 4.6 LSB
12-bit setting, maximum(1) 13.3
12-bit setting, mean, clocked by RCOSC 10
12-bit setting, max, clocked by RCOSC 29
SINAD
(–THD+N) 		Signal-to-noise-and-distortion Single ended input, 7-bit setting(1) 35.4 dB
Single ended input, 9-bit setting(1) 46.8
Single ended input, 10-bit setting(1) 57.5
Single ended input, 12-bit setting(1) 66.6
Differential input, 7-bit setting(1) 40.7
Differential input, 9-bit setting(1) 51.6
Differential input, 10-bit setting(1) 61.8
Differential input, 12-bit setting(1) 70.8
Conversion time 7-bit setting 20 µs
9-bit setting 36
10-bit setting 68
12-bit setting 132
Power consumption 1.2 mA
Internal reference VDD coefficient 4 mV/V
Internal reference temperature coefficient 0.4 mV/10°C
Internal reference voltage 1.24 V
(1) Measured with 300-Hz sine-wave input and VDD as reference.

4.19 Control Input AC Characteristics

TA = –40°C to 125°C, VDD = 2 V to 3.6 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
System clock, fSYSCLK
tSYSCLK = 1 / fSYSCLK 		The undivided system clock is 32 MHz when crystal oscillator is used. The undivided system clock is 16 MHz when calibrated 16-MHz RC oscillator is used. 16 32 MHz
RESET_N low duration See item 1 in Figure 4-1. This is the shortest pulse that is recognized as a complete reset pin request. Note that shorter pulses may be recognized but do not lead to complete reset of all modules within the chip. 1 µs
Interrupt pulse duration See item 2 in Figure 4-1. This is the shortest pulse that is recognized as an interrupt request. 20 ns
CC2540T T0299-01_WRS075.gif Figure 4-1 Control Input AC Characteristics

4.20 SPI AC Characteristics

TA = –40°C to 125°C, VDD = 2 V to 3.6 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t1 SCK period Master, RX and TX 250 ns
Slave, RX and TX 250
SCK duty cycle Master 50%
t2 SSN low to SCK Master 63 ns
Slave 63
t3 SCK to SSN high Master 63 ns
Slave 63
t4 MOSI early out Master, load = 10 pF 7 ns
t5 MOSI late out Master, load = 10 pF 10 ns
t6 MISO setup Master 90 ns
t7 MISO hold Master 10 ns
SCK duty cycle Slave 50% ns
t10 MOSI setup Slave 35 ns
t11 MOSI hold Slave 10 ns
t9 MISO late out Slave, load = 10 pF 95 ns
Operating frequency Master, TX only 8 MHz
Master, RX and TX 4
Slave, RX only 8
Slave, RX and TX 4
CC2540T T0478-01_WRS086.gif Figure 4-2 SPI Master AC Characteristics
CC2540T T0479-01_WRS086.gif Figure 4-3 SPI Slave AC Characteristics

4.21 Debug Interface AC Characteristics

TA = –40°C to 125°C, VDD = 2 V to 3.6 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fclk_dbg Debug clock frequency (see Figure 4-4) 12 MHz
t1 Allowed high pulse on clock (see Figure 4-4) 35 ns
t2 Allowed low pulse on clock (see Figure 4-4) 35 ns
t3 EXT_RESET_N low to first falling edge on debug clock (see Figure 4-6) 167 ns
t4 Falling edge on clock to EXT_RESET_N high (see Figure 4-6) 83 ns
t5 EXT_RESET_N high to first debug command (see Figure 4-6) 83 ns
t6 Debug data setup (see Figure 4-5) 2 ns
t7 Debug data hold (see Figure 4-5) 4 ns
t8 Clock-to-data delay (see Figure 4-5) Load = 10 pF 30 ns
CC2540T T0436-01_WRS081.gif Figure 4-4 Debug Clock–Basic Timing
CC2540T T0437-01_WRS081.gif Figure 4-5 Debug Enable Timing
CC2540T T0438-02_WRS084.gif Figure 4-6 Data Setup and Hold Timing

4.22 Timer Inputs AC Characteristics

TA = –40°C to 125°C, VDD = 2 V to 3.6 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input capture pulse duration Synchronizers determine the shortest input pulse that can be recognized. The synchronizers operate at the current system clock rate (16 MHz or 32 MHz). 1.5 tSYSCLK

4.23 DC Characteristics

TA = 25°C, VDD = 3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Logic-0 input voltage 0.5 V
Logic-1 input voltage 2.5 V
Logic-0 input current Input equals 0 V –50 50 nA
Logic-1 input current Input equals VDD –50 50 nA
I/O-pin pullup and pulldown resistors 20 kΩ
Logic-0 output voltage, 4-mA pins Output load 4 mA 0.5 V
Logic-1 output voltage, 4-mA pins Output load 4 mA 2.4 V

4.24 Typical Characteristics

CC2540T D001_SWRS172.gif
Gain = Standard Setting
Input = –70 dBm
VCC = 3 V
Figure 4-7 RX Current in Wait for Sync vs Temperature
CC2540T D003_SWRS172.gif
Gain = Standard Setting
VCC = 3 V
Figure 4-9 RX Sensitivity vs Temperature
CC2540T D005_SWRS172.gif
Gain = Standard Setting
Input = –70 dBm
TA = 25°C
Figure 4-11 RX Current in Wait for Sync vs Supply Voltage
CC2540T D007_SWRS172.gif
Gain = Standard Setting
TA = 25°C
Figure 4-13 RX Sensitivity vs Supply Voltage
CC2540T D009_SWRS172.gif
Gain = Standard Setting
TA = 25°C
VCC = 3 V
Figure 4-15 RX Sensitivity vs Frequency
CC2540T D011_SWRS172.gif
TA = 25°C
TX Power Setting = 4 dBm
VCC = 3 V
Figure 4-17 TX Power vs Frequency
CC2540T D002_SWRS172.gif
TX Power Setting = 4 dBm
VCC = 3 V
Figure 4-8 TX Current vs Temperature
CC2540T D004_SWRS172.gif
TX Power Setting = 4 dBm
VCC = 3 V
Figure 4-10 TX Power vs Temperature
CC2540T D006_SWRS172.gif
TA = 25°C
TX Power Setting = 4 dBm
Figure 4-12 TX Current vs Supply Voltage
CC2540T D008_SWRS172.gif
TA = 25°C
TX Power Setting = 4 dBm
Figure 4-14 TX Power vs Supply Voltage
CC2540T D010_SWRS172.gif
TA = 25°C Wanted Signal at 2426 MHz
with –67 dBm Level
VCC = 3 V
Gain = Standard Setting
Figure 4-16 RX Interferer Rejection (Selectivity) vs Interferer Frequency

Table 4-1 Output Power and Current Consumption(1)(2)

TYPICAL
OUTPUT POWER (dBm) 		TYPICAL
CURRENT CONSUMPTION (mA)		 TYPICAL CURRENT CONSUMPTION
WITH TPS62730 (mA)
4 32 24.6
0 27 21
–6 24 18.5
–23 21 16.5
(1) Measured on Texas Instruments CC2540 EM reference design with TA = 25°C, VDD = 3 V and
fc = 2440 MHz. See SWRU191 for recommended register settings.
(2) Measured on Texas Instruments CC2540TPS62730 EM reference design with TA = 25°C, VDD = 3 V and fc = 2440 MHz. See SWRU191 for recommended register settings.

4.25 Typical Current Savings

CC2540T TX_Current_Save_lws084.gif Figure 4-18 Current Savings in TX at Room Temperature
CC2540T RX_Current_Save_lws084.gif Figure 4-19 Current Savings in RX at Room Temperature

See the application note (SWRA365) for information regarding the CC2540T and TPS62730 como board and the current savings that can be achieved using the como board.