ZHCSBX5B 数据表 | 德州仪器 TI.com.cn

ZHCSBX5B October 2013 – October 2014 CC1201

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

RHB|32

散热焊盘机械数据 (封装 | 引脚)

RHB|32
- QFND029X

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4 Specifications

All measurements performed on CC1200EM_868_930 rev.1.0.0, CC1200EM_420_470 rev.1.0.1, or CC1200EM_169 rev.1.2.

4.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾

over operating free-air temperature range (unless otherwise noted)

PARAMETER	MIN	MAX	UNIT	CONDITION
Supply voltage (VDD, AVDD_x)	–0.3	3.9	V	All supply pins must have the same voltage
Input RF level		+10	dBm
Voltage on any digital pin	–0.3	VDD+0.3	V	max 3.9 V
Voltage on any analog Pin (including DCPL pins)	–0.3	2.0	V

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to V_SS, unless otherwise noted.

4.2 Handling Ratings

				MIN	MAX	UNIT
T_stg	Storage temperature range			–40	125	°C
V_ESD	Electrostatic discharge (ESD) performance:	Human body model (HBM), per ANSI/ESDA/JEDEC JS001⁽¹⁾		–2	2	kV
V_ESD	Electrostatic discharge (ESD) performance:	Charged device model (CDM), per JESD22-C101⁽²⁾	All pins	–500	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V HBM allows safe manufacturing with a standard ESD control process.

4.3 Recommended Operating Conditions (General Characteristics)

PARAMETER	MIN	MAX	UNIT	CONDITION
Voltage supply range	2.0	3.6	V	All supply pins must have the same voltage
Voltage on digital inputs	0	VDD	V
Temperature range	–40	85	°C	Ambient

4.4 Thermal Resistance Characteristics for RHB Package

		°C/W⁽¹⁾
Rθ_JC	Junction-to-case (top)	21.1
Rθ_JB	Junction-to-board	5.3
Rθ_JA	Junction-to-free air	31.3
Psi_JT	Junction-to-package top	0.2
Psi_JB	Junction-to-board	5.3
Rθ_JC	Junction-to-case (bottom)	0.8

(1) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘ_JC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/JEDEC standards:

JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements

Power dissipation of 40 mW and an ambient temperature of 25ºC is assumed.

(2) m/s = meters per second

4.5 RF Characteristics

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Frequency bands	820		950	MHz
	410		475	MHz
	164		190	MHz
	(274)		(316.6)	MHz	Contact TI for more information about the use of these frequency bands.
	(205)		(237.5)	MHz
	(137)		(158.3)	MHz
Frequency resolution		30		Hz	In 820–950 MHz band
		15		Hz	In 410–475 MHz band
		6		Hz	In 164–190 MHz band
Data rate	0		1250	kbps	Packet mode
Data rate	0		625	kbps	Transparent mode

4.6 Regulatory Standards

PERFORMANCE MODE	FREQUENCY BAND	SUITABLE FOR COMPLIANCE WITH	COMMENTS
High-performance mode	820–950 MHz	ARIB STD-T108 ETSI EN 300 220 receiver categories 2 and 3 FCC PART 15.247 FCC PART 15.249	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the CC1190
	410–475 MHz	ETSI EN 300 220 receiver categories 2 and 3	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
	164–190 MHz	ETSI EN 300 220	Performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender
Low-power mode	820–950 MHz	ETSI EN 300 220 receiver categories 2 and 3 FCC PART 15.247 FCC PART 15.249
	410–475 MHz	ETSI EN 300 220 receiver categories 2 and 3
	164–190 MHz	ETSI EN 300 220

4.7 Current Consumption, Static Modes

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	MAX	UNIT	CONDITION
Power down with retention	0.12	1	µA
Power down with retention	0.5		µA	Low-power RC oscillator running
XOFF mode	180		µA	Crystal oscillator / TCXO disabled
IDLE mode	1.5		mA	Clock running, system waiting with no radio activity

4.8 Current Consumption, Transmit Modes

4.8.1 868-, 915-, and 920-MHz Bands (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
TX current consumption +14 dBm			46		mA
TX current consumption +10 dBm			36		mA

4.8.2 433-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	49	mA
TX current consumption +14 dBm	46	mA
TX current consumption +10 dBm	35	mA

4.8.3 169-MHz Band (High Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT
TX current consumption +15 dBm	54	mA
TX current consumption +14 dBm	50	mA
TX current consumption +10 dBm	39	mA

4.8.4 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
TX Current Consumption +10 dBm			33.6		mA

4.9 Current Consumption, Receive Modes

4.9.1 High-Performance Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
RX wait for sync			Using RX Sniff Mode, where the receiver wakes up at regular intervals looking for an incoming packet. Sniff mode configured to terminate on carrier sense, and is measured using RSSI_VALID _COUNT = 1 (0 for 1.2 kbps), AGC_WIN_SIZE = 0, and SETTLE_WAIT = 1.⁽¹⁾
1.2 kbps, 4-byte preamble	0.5	mA
38.4 kbps, 12-byte preamble	3.5	mA
50 kbps, 24-byte preamble	2.1	mA
RX peak current			Peak current consumption during packet reception
1.2 kbps	23.6	mA	Peak current consumption during packet reception
Average current consumption Check for data packet every 1 second using eWOR	8	µA	50 kbps, 5-byte preamble, 40-kHz RC oscillator used as eWOR timer

(1) See the sniff mode design note for more information (SWRA428)

4.9.2 Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER		MIN	TYP	MAX	UNIT	CONDITION
RX Peak current low-power RX mode						Peak current consumption during packet reception at the sensitivity limit
50 kbps			19		mA

4.10 Receive Parameters

All RX measurements made at the antenna connector, to a bit error rate (BER) limit of 1%. Selectivity and blocking is measured with the desired signal 3 dB above the sensitivity level.

4.10.1 General Receive Parameters (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Saturation		+10		dBm
Digital channel filter programmable bandwidth	50		1600	kHz
IIP3		–14		dBm	At maximum gain
Data rate offset tolerance		±14		%	With carrier sense detection enabled
Data rate offset tolerance		±1600		ppm	With carrier sense detection disabled
Spurious emissions					Radiated emissions measured according to ETSI EN 300 220, f_c = 869.5 MHz
1–13 GHz (VCO leakage at 3.5 GHz)		< –56		dBm
30 MHz to 1 GHz		< –57		dBm
Optimum source impedance					(Differential or Single-Ended RX Configurations)
868-, 915-, and 920-MHz bands	60 + j60 / 30 + j30			Ω
433-MHz band	100 + j60 / 50 + j30			Ω
169-MHz band	140 + j40 / 70 + j20			Ω

4.10.2 RX Performance in 868-, 915-, and 920-MHz Bands (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–119	dBm	1.2 kbps 2-FSK, DEV=20 kHz CHF=50 kHz⁽¹⁾
	–113	dBm	4.8 kbps OOK CHF=128 kHz⁽¹⁾
	–108	dBm	32.768 kbps 2-GFSK, DEV=50 kHz CHF=208 kHz⁽¹⁾
	–110	dBm	38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz⁽¹⁾
	–109	dBm	50 kbps 2-GFSK, DEV=25 kHz, CHF=104 kHz⁽¹⁾
	–97	dBm	500 kbps 2-GMSK, CHF=833 kHz⁽¹⁾
	–97	dBm	1 Mbps 4-GFSK, DEV=400 kHz, CHF=1.66 MHz⁽¹⁾
Blocking and selectivity 1.2-kbps 2-FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	50	dB	± 50 kHz (adjacent channel)
	50	dB	± 100 kHz (alternate channel)
	75	dB	± 2 MHz
	80	dB	± 10 MHz
Blocking and selectivity 32.768-kbps 2-GFSK, 200-kHz channel separation, 50-kHz deviation, 208-kHz channel filter	38	dB	± 200 kHz
	46	dB	± 400 kHz
	66	dB	± 2 MHz
	70	dB	± 10 MHz
Blocking and selectivity 38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 104-kHz channel filter	44	dB	+ 100 kHz (adjacent channel)
	44	dB	± 200 kHz (alternate channel)
	64	dB	± 2 MHz
	72	dB	± 10 MHz
Blocking and selectivity 50-kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 104-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)	41	dB	± 200 kHz (adjacent channel)
	46	dB	± 400 kHz (alternate channel)
	65	dB	± 2 MHz
	71	dB	± 10 MHz
Blocking and selectivity 100-kbps 2-GFSK, 50-kHz deviation, 208-kHz channel filter	45	dB	± 400 kHz (adjacent channel)
	54	dB	± 800 kHz (alternate channel)
	63	dB	± 2 MHz
	68	dB	± 10 MHz
Blocking and selectivity 500-kbps GMSK, 833-kHz channel filter	42	dB	+ 1 MHz (adjacent channel)
	42	dB	± 2 MHz (alternate channel)
	57	dB	± 10 MHz
Blocking and selectivity 1-Mbps 4-GFSK, 400-kHz deviation, 1.6-MHz channel filter	46	dB	± 2 MHz (adjacent channel)
	52	dB	± 4 MHz (alternate channel)
	59	dB	± 10 MHz

(1) DEV is short for deviation, CHF is short for Channel Filter Bandwidth

4.10.3 RX Performance in 433-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–120	dBm	1.2 kbps 2-FSK, DEV=20 kHz CHF=50 kHz⁽¹⁾
Sensitivity	–111	dBm	38.4 kbps 2-GFSK, DEV=20 kHz CHF=104 kHz⁽¹⁾
Blocking and selectivity 1.2-kbps 2-FSK, 50-kHz channel separation, 20-kHz deviation, 50-kHz channel filter	56	dB	± 50 kHz (adjacent channel)
	56	dB	± 100 kHz (alternate channel)
	79	dB	± 2 MHz
	84	dB	± 10 MHz
Blocking and selectivity 38.4-kbps 2-GFSK, 100-kHz channel separation, 20-kHz deviation, 104-kHz channel filter	49	dB	+ 100 kHz (adjacent channel)
	48	dB	± 200 kHz (alternate channel)
	66	dB	± 2 MHz
	74	dB	± 10 MHz

4.10.4 RX Performance in 169-MHz Band (High-Performance Mode)

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–119	dBm	1.2 kbps 2-FSK, DEV=20 kHz CHF=50 kHz⁽¹⁾
Blocking and Selectivity 1.2 kbps 2-FSK, 50 kHz channel separation, 20 kHz deviation, 50 kHz channel filter	62	dB	± 50 kHz (adjacent channel)
	62	dB	± 100 kHz (alternate channel)
	81	dB	± 2 MHz
	85	dB	± 10 MHz
Image rejection (Image compensation enabled)	67	dB	1.2 kbps, DEV=20 kHz, CHF=50 kHz, image at –417 kHz⁽¹⁾

4.10.5 RX Performance in Low-Power Mode

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Sensitivity	–96	dBm	50 kbps 2-GFSK, DEV=25 kHz, CHF=119 kHz⁽¹⁾
Blocking and selectivity 50 kbps 2-GFSK, 200-kHz channel separation, 25-kHz deviation, 104-kHz channel filter (Same modulation format as 802.15.4g Mandatory Mode)	41	dB	+ 200 kHz (adjacent channel)
	45	dB	+ 400 kHz (alternate channel)
	62	dB	± 2 MHz
	60	dB	± 10 MHz
Saturation	10	dBm

4.11 Transmit Parameters

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

PARAMETER	MIN	TYP	UNIT	CONDITION
Max output power		+14	dBm	At 915/920 MHz
		+15	dBm	At 915/920 MHz with VDD = 3.6 V
		+15	dBm	At 868 MHz
		+16	dBm	At 868 MHz with VDD = 3.6 V
		+15	dBm	At 433 MHz
		+16	dBm	At 433 MHz with VDD = 3.6 V
		+15	dBm	At 169 MHz
		+16	dBm	At 169 MHz with VDD = 3.6 V
Min output power		–12	dBm	Within fine step size range
Min output power		–38	dBm	Within coarse step size range
Output power step size		0.4	dB	Within fine step size range
Adjacent channel power		–60	dBc	4-GFSK 9.6 kbps in 12.5 kHz channel, measured in 8.75 kHz bandwidth (ETSI 300 220 compliant)
Spurious emissions (Excluding harmonics)				Transmission at +14 dBm Suitable for systems targeting compliance with ETSI EN 300-220, FCC part 15, ARIB STD-T108 Measured in 1 MHz bandwidth


30 MHz–1 GHz		< –57	dBm
1–12.75 GHz		< –50	dBm
Harmonics				Transmission at +14 dBm (or maximum allowed in applicable band where this is less than +14 dBm) using TI reference design Suitable for systems targeting compliance with ETSI EN 300-220, FCC part 15, ARIB STD-T108
Second Harm, 169 MHz (ETSI)		–43	dBm
Third Harm, 169 MHz (ETSI)		–57	dBm
Fourth Harm, 169 MHz (ETSI)		–63	dBm

Second Harm, 433 MHz (ETSI)		–59	dBm
Third Harm, 433 MHz (ETSI)		–51	dBm
Fourth Harm, 433 MHz (ETSI)		–63	dBm

Second Harm, 868 MHz (ETSI)		–50	dBm
Third Harm, 868 MHz (ETSI)		–44	dBm
Fourth Harm, 868 MHz (ETSI)		–56	dBm

Second Harm, 915 MHz (FCC)		–58	dBm
Third Harm, 915 MHz (FCC)		–46	dBm
Fourth Harm, 915 MHz (FCC)		–62	dBm

Second Harm, 920 MHz (ARIB)		–65	dBm
Third Harm, 920 MHz (ARIB)		–60	dBm
Optimum load impedance
868-, 915-, and 920-MHz bands	35 + j35		Ω
433-MHz band	55 + j25		Ω
169-MHz band	80 + j0		Ω

4.12 PLL Parameters

4.12.1 High Performance Mode

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 868-, 915-, and 920-MHz Bands 200-kHz loop bandwidth setting	–94	dBc/Hz	± 10 kHz offset
	–96	dBc/Hz	± 100 kHz offset
	–123	dBc/Hz	± 1 MHz offset
	–137	dBc/Hz	± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz Bands 300-kHz loop bandwidth setting	–100	dBc/Hz	± 10 kHz offset
	–102	dBc/Hz	± 100 kHz offset
	–121	dBc/Hz	± 1 MHz offset
	–136	dBc/Hz	± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz Bands 400-kHz loop bandwidth setting	–103	dBc/Hz	± 10 kHz offset
	–104	dBc/Hz	± 100 kHz offset
	–119	dBc/Hz	± 1 MHz offset
	–133	dBc/Hz	± 10 MHz offset
Phase noise in 868-, 915-, and 920-MHz Bands 500-kHz loop bandwidth setting	–104	dBc/Hz	± 10 kHz offset
	–106	dBc/Hz	± 100 kHz offset
	–116	dBc/Hz	± 1 MHz offset
	–130	dBc/Hz	± 10 MHz offset
Phase noise in 433-MHz band 300-kHz loop bandwidth setting	–106	dBc/Hz	± 10 kHz offset
	–107	dBc/Hz	± 100 kHz offset
	–127	dBc/Hz	± 1 MHz offset
	–141	dBc/Hz	± 10 MHz offset
Phase noise in 169-MHz band 300-kHz loop bandwidth setting	–114	dBc/Hz	± 10 kHz offset
	–114	dBc/Hz	± 100 kHz offset
	–132	dBc/Hz	± 1 MHz offset
	–142	dBc/Hz	± 10 MHz offset

4.12.2 Low-Power Mode

PARAMETER	TYP	UNIT	CONDITION
Phase noise in 868-, 915-, and 920-MHz bands 200-kHz loop bandwidth setting	–99	dBc/Hz	± 10 kHz offset
	–101	dBc/Hz	± 100 kHz offset
	–121	dBc/Hz	± 1 MHz offset
	–135	dBc/Hz	± 10 MHz offset

4.13 Wake-up and Timing

T_A = 25°C, VDD = 3.0 V, f_c = 869.5 MHz (unless otherwise noted)

The turnaround behavior to and from RX and/or TX is highly configurable, and the time it takes will depend on how the device is set up. See the CC120X user guide (SWRU346) for more information.

PARAMETER	TYP	UNIT	CONDITION
Powerdown to IDLE	0.24	ms	Depends on crystal
IDLE to RX/TX	133	µs	Calibration disabled
IDLE to RX/TX	369	µs	Calibration enabled
RX/TX turnaround	43	µs
RX-to-RX turnaround	369	µs	With PLL calibration
RX-to-RX turnaround	0	µs	Without PLL calibration
TX-to-TX turnaround	369	µs	With PLL calibration
TX-to-TX turnaround	0	µs	Without PLL calibration
RX/TX to IDLE time	237	µs	Calibrate when leaving RX/TX enabled
RX/TX to IDLE time	0	µs	Calibrate when leaving RX/TX disabled
Frequency synthesizer calibration	314	µs	When using SCAL strobe
Minimum required number of preamble bytes	0.5	bytes	Required for RF front end gain settling only. Digital demodulation does not require preamble for settling
Time from start RX until valid RSSI⁽¹⁾ Including gain settling (function of channel bandwidth. Programmable for trade-off between speed and accuracy)	0.25	ms	120-kHz channels

(1) See the design note on RSSI and response time. It is written for the CC112X devices, but the same principles apply for the CC1201 device.

4.14 40-MHz Crystal Oscillator

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Crystal frequency	38.4		40	MHz	It is expected that there will be degraded sensitivity at multiples of XOSC/2 in RX, and an increase in spurious emissions when the RF channel is close to multiples of XOSC in TX. We recommend that the RF channel is kept RX_BW/2 away from XOSC/2 in RX, and that the level of spurious emissions be evaluated if the RF channel is closer than 1 MHz to multiples of XOSC in TX.
Load capacitance (C_L)		10		pF
ESR			60	Ω	Simulated over operating conditions
Start-up time		0.24		ms	Depends on crystal

4.15 40-MHz Clock Input (TCXO)

T_A = 25°C, VDD = 3.0 V if nothing else stated

PARAMETER	MIN	MAX	UNIT	CONDITION
Clock frequency	38.4	40	MHz
TCXO with CMOS output				TCXO with CMOS output directly coupled to pin EXT_OSC
High input voltage	1.4	VDD	V
Low input voltage	0	0.6	V
Rise / Fall time		2	ns
Clipped sine output				TCXO clipped sine output connected to pin EXT_OSC through series capacitor
Clock input amplitude (peak-to-peak)	0.8	1.5	V

4.16 32-kHz Clock Input

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	MIN	TYP	MAX	UNIT
Clock frequency		32		kHz
32-kHz clock input pin input high voltage	0.8 x VDD			V
32-kHz clock input pin input low voltage			0.2 x VDD	V

4.17 40-kHz RC Oscillator

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	TYP	UNIT	CONDITION
Frequency	40	kHz	After calibration (frequency calibrated against the 40-MHz crystal or TCXO)
Frequency accuracy after calibration	±0.1	%	Relative to frequency reference (that is, 40-MHz crystal or TCXO)
Initial calibration time	1.32	ms

4.18 I/O and Reset

T_A = 25°C, VDD = 3.0 V (unless otherwise noted)

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Logic input high voltage	0.8 x VDD			V
Logic input low voltage			0.2 x VDD	V
Logic output high voltage	0.8 x VDD			V	At 4-mA output load or less
Logic output low voltage			0.2 x VDD	V	At 4-mA output load or less
Power-on reset threshold		1.3		V	Voltage on DVDD pin

4.19 Temperature Sensor

T_A = 25°C, VDD = 3.0 V (unless otherwise noted).

PARAMETER	MIN	TYP	MAX	UNIT	CONDITION
Temperature sensor range	–40		85	°C
Temperature coefficient		2.66		mV / °C	Change in sensor output voltage versus change in temperature
Typical output voltage		794		mV	Typical sensor output voltage at TA = 25°C, VDD = 3.0 V
VDD coefficient		1.17		mV / V	Change in sensor output voltage versus change in VDD

The CC1201 device can be configured to provide a voltage proportional to temperature on GPIO1. The temperature can be estimated by measuring this voltage (see Section 4.19, Temperature Sensor). For more information, see the temperature sensor design note (SWRA415).