ZHCSP94A November   2021  – February 2022 BQ27Z746

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
      1. 6.5.1 Supply Current
      2. 6.5.2 Common Analog (LDO, LFO, HFO, REF1, REF2, I-WAKE)
      3. 6.5.3 Battery Protection (CHG, DSG)
      4. 6.5.4 Cell Sensing Output (BAT_SP, BAT_SN)
      5. 6.5.5 Gauge Measurements (ADC, CC, Temperature)
      6. 6.5.6 Flash Memory
    6. 6.6 Digital I/O: DC Characteristics
    7. 6.7 Digital I/O: Timing Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  BQ27Z746 Processor
      2. 7.3.2  Battery Parameter Measurements
        1. 7.3.2.1 Coulomb Counter (CC) and Digital Filter
        2. 7.3.2.2 ADC Multiplexer
        3. 7.3.2.3 Analog-to-Digital Converter (ADC)
        4. 7.3.2.4 Internal Temperature Sensor
        5. 7.3.2.5 External Temperature Sensor Support
      3. 7.3.3  Power Supply Control
      4. 7.3.4  Bus Communication Interface
      5. 7.3.5  Low Frequency Oscillator
      6. 7.3.6  High Frequency Oscillator
      7. 7.3.7  1.8-V Low Dropout Regulator
      8. 7.3.8  Internal Voltage References
      9. 7.3.9  Overcurrent in Discharge Protection
      10. 7.3.10 Overcurrent in Charge Protection
      11. 7.3.11 Short-Circuit Current in Discharge Protection
      12. 7.3.12 Primary Protection Features
      13. 7.3.13 Battery Sensing
      14. 7.3.14 Gas Gauging
      15. 7.3.15 Zero Volt Charging (ZVCHG)
      16. 7.3.16 Charge Control Features
      17. 7.3.17 Authentication
    4. 7.4 Device Functional Modes
      1. 7.4.1 Lifetime Logging Features
      2. 7.4.2 Configuration
        1. 7.4.2.1 Coulomb Counting
        2. 7.4.2.2 Cell Voltage Measurements
        3. 7.4.2.3 Auto Calibration
        4. 7.4.2.4 Temperature Measurements
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Default)
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Changing Design Parameters
      3. 8.2.3 Calibration Process
      4. 8.2.4 Gauging Data Updates
        1. 8.2.4.1 Application Curve
  9. 9 Power Supply Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Orderable, and Packaging Information

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6.5.5 Gauge Measurements (ADC, CC, Temperature)

Unless otherwise noted, characteristics noted under conditions of TA = –40 to 85℃
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Analog Digital Converter (ADC)
VBAT_RES Battery Voltage ADC Resolution (bits) Signed data format, ±15 bits 16 bits
VBAT_FS Battery Measurement Full Scale Range –0.2 5.5 V
VBAT_ERR Battery Voltage ADC Error TA = +25℃, VBAT = 4.0 VDC ±1 mV
VBAT = 2.5 to 5.0 VDC ±2
RBAT Effective input resistance 8 MΩ
tBAT Battery Voltage Conversion Time 11.7 ms
VADC_RES Effective Resolution VBAT 14 15 bits
Coulomb Counter (CC)
VCC_CM Common mode voltage range VSS = 0V, 2V ≤ VBAT ≤ 5V VSS VBAT V
VCC_IN Input voltage range VCC_CM–0.1 VCC_CM+0.1 V
ICC_IN Effective input current sense range (1) (2) Ideal RSNS = 1 mΩ (16-bit data limited) ±32,768 mA
Ideal RSNS = 2 mΩ (16-bit data limited)
Ideal RSNS = 5 mΩ ±20,000
tCC_CONV Conversion time Single conversion 1000 ms
CCADC_RES Effective Resolution 16 bits
1 LSB = VREF1/10/(±215) ±3.7 µV
ICC_ERR Effective current measurement error Ideal RSNS = 1.0 mΩ, 10.0 A, TA = 25 ℃ 26 mA
Ideal RSNS = 1.0 mΩ, –10.0 A, TA = 25 ℃ 29
CCOSE Offset error 16- bit Post-Calibration -2.6 1.3 +2.6 LSB
CCOSE_DRIFT Offset error drift 15-bit + sign, Post Calibration 0.04 0.07 LSB/°C
CCGE Gain Error 15-bit + sign, Over input voltage range -492 131 +492 LSB
RCC_IN Effective input resistance 7 MΩ
NTC Thermistor Measurement
RNTC(PU) Internal Pullup Resistance Factory Trimmed, Firmware compensated 14.4 18 21.6 kΩ
RNTC(DRIFT) Resistance drift over temperature Firmware compensated –250 –120 0 PPM/°C
RNTC_ERR External NTC Thermistor
Temperature Measurement
Error with Linearization		 Ideal 10KΩ 103AT NTC, TA = –10 to 70℃ –2 ±1 +2 ℃
Ideal 10KΩ 103AT NTC, TA = –40 to 85℃ –3 ±2 +3
Internal Temperature Sensor
V(TEMP) Internal Temperature sensor voltage drift VTEMPP 1.65 1.73 1.8 mV/°C
V(TEMP) Internal Temperature sensor voltage drift VTEMPP – VTEMPN (specified by design) 0.17 0.18 0.19 mV/°C
(1) Firmware-based parameter.  Not production tested.
(2) Limited by 16-bit twos-complement numeric format