ZHCSLT1B december   2020  – july 2023 BQ25672

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Device Power-On-Reset
      2. 8.3.2  PROG Pin Configuration
      3. 8.3.3  Device Power Up from Battery without Input Source
      4. 8.3.4  Device Power Up from Input Source
        1. 8.3.4.1 Power Up REGN LDO
        2. 8.3.4.2 Poor Source Qualification
        3. 8.3.4.3 ILIM_HIZ Pin
        4. 8.3.4.4 Default VINDPM Setting
        5. 8.3.4.5 Input Source Type Detection
          1. 8.3.4.5.1 D+/D– Detection Sets Input Current Limit
          2. 8.3.4.5.2 HVDCP Detection Procedure
          3. 8.3.4.5.3 Connector Fault Detection
      5. 8.3.5  Dual-Input Power Mux
        1. 8.3.5.1 VBUS Input Only
        2. 8.3.5.2 One ACFET-RBFET
        3. 8.3.5.3 Two ACFETs-RBFETs
      6. 8.3.6  Buck Converter Operation
        1. 8.3.6.1 Force Input Current Limit Detection
        2. 8.3.6.2 Input Current Optimizer (ICO)
        3. 8.3.6.3 Maximum Power Point Tracking for Small PV Panel
        4. 8.3.6.4 Pulse Frequency Modulation (PFM)
        5. 8.3.6.5 Device HIZ State
      7. 8.3.7  USB On-The-Go (OTG)
        1. 8.3.7.1 OTG Mode to Power External Devices
      8. 8.3.8  Power Path Management
        1. 8.3.8.1 Narrow Voltage DC Architecture
        2. 8.3.8.2 Dynamic Power Management
      9. 8.3.9  Battery Charging Management
        1. 8.3.9.1 Autonomous Charging Cycle
        2. 8.3.9.2 Battery Charging Profile
        3. 8.3.9.3 Charging Termination
        4. 8.3.9.4 Charging Safety Timer
        5. 8.3.9.5 Thermistor Qualification
          1. 8.3.9.5.1 JEITA Guideline Compliance in Charge Mode
          2. 8.3.9.5.2 Cold/Hot Temperature Window in OTG Mode
      10. 8.3.10 Integrated 16-Bit ADC for Monitoring
      11. 8.3.11 Status Outputs ( STAT, and INT)
        1. 8.3.11.1 Charging Status Indicator (STAT Pin)
        2. 8.3.11.2 Interrupt to Host ( INT)
      12. 8.3.12 Ship FET Control
        1. 8.3.12.1 Shutdown Mode
        2. 8.3.12.2 Ship Mode
        3. 8.3.12.3 System Power Reset
      13. 8.3.13 Protections
        1. 8.3.13.1 Voltage and Current Monitoring
          1. 8.3.13.1.1  VAC Over-voltage Protection (VAC_OVP)
          2. 8.3.13.1.2  VBUS Over-voltage Protection (VBUS_OVP)
          3. 8.3.13.1.3  VBUS Under-voltage Protection (POORSRC)
          4. 8.3.13.1.4  System Over-voltage Protection (VSYS_OVP)
          5. 8.3.13.1.5  System Short Protection (VSYS_SHORT)
          6. 8.3.13.1.6  Battery Over-voltage Protection (VBAT_OVP)
          7. 8.3.13.1.7  Battery Over-current Protection (IBAT_OCP)
          8. 8.3.13.1.8  Input Over-current Protection (IBUS_OCP)
          9. 8.3.13.1.9  OTG Over-voltage Protection (OTG_OVP)
          10. 8.3.13.1.10 OTG Under-voltage Protection (OTG_UVP)
        2. 8.3.13.2 Thermal Regulation and Thermal Shutdown
      14. 8.3.14 Serial Interface
        1. 8.3.14.1 Data Validity
        2. 8.3.14.2 START and STOP Conditions
        3. 8.3.14.3 Byte Format
        4. 8.3.14.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 8.3.14.5 Target Address and Data Direction Bit
        6. 8.3.14.6 Single Write and Read
        7. 8.3.14.7 Multi-Write and Multi-Read
    4. 8.4 Device Functional Modes
      1. 8.4.1 Host Mode and Default Mode
      2. 8.4.2 Register Bit Reset
    5. 8.5 Register Map
      1. 8.5.1 I2C Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input (VBUS / PMID) Capacitor
        3. 9.2.2.3 Output (VSYS) Capacitor
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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8.3.8.2 Dynamic Power Management

To meet the maximum current limit in USB spec and avoid over loading the adapter, the device features Dynamic Power Management (DPM), which continuously monitors the input current and input voltage. When the input power at the VBUS pin is too low to support the load from SYS pin and the battery charge current from BAT pin, the charger engages either IINDPM to limit its current or VINDPM to prevent further reduction in VBUS pin voltage.

When the system voltage is regulated at VSYSMIN, the charger could be in trickle charge, pre-charge or fast charge stages, the SYS voltage drops lower than VSYSMIN, the VSYSMIN loop takes over and reduces the trickle charge, pre-charge or fast charge current, so that the SYS voltage remains at the VSYSMIN level.

If the charge current falls to zero, but the input source is still overloaded, the SYS voltage will drop. Once the SYS voltage falls below the battery voltage, the device automatically enters Supplement Mode in which the BATFET turns on. The battery starts discharging so that the system is supported from both the input source and battery. In supplement mode, the battery FET is operated in ideal diode mode in which the charger regulates the battery FET gate voltage to keep the BATFET minimum VDS to approximately 25 mV when the current is low. This prevents SYS voltage oscillations from entering and exiting the supplement mode. As the discharge current increases, the charger regulates the BATFET gate to a higher voltage, in order to reduce the battery FET RDSON until the MOSFET is in full turn-on stage. At this point onwards, the VDS of the battery FET linearly increase with the discharge current. The figure below shows the V-I curve of the BATFET gate regulation operation. The BATFET turns off to exit Supplement Mode when the battery is below battery depletion threshold.

GUID-20201203-CA0I-XZ0W-S5L6-ZKH0KDT32WHC-low.gif Figure 8-8 BATFET I-V Curve

During DPM mode, the status register bits VINDPM_STAT (VINDPM) and/or IINDPM_STAT (IINDPM) go high. The figure below shows the DPM response with 9V/1.2A adapter, 3.2V battery, 2.8A charge current and 3.5V minimum system voltage setting.

GUID-20201102-CA0I-6CWH-5N1V-NQNWH6FW4LMJ-low.gif Figure 8-9 DPM Response