ZHCSBK4G March   2013  – March 2019

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      典型应用原理图
      2.      充电器效率与输入电压
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Maximum Power Point Tracking
      2. 7.3.2 Battery Undervoltage Protection
      3. 7.3.3 Battery Overvoltage Protection
      4. 7.3.4 Battery Voltage within Operating Range (VBAT_OK Output)
      5. 7.3.5 Storage Element / Battery Management
      6. 7.3.6 Programming OUT Regulation Voltage
      7. 7.3.7 Step Down (Buck) Converter
      8. 7.3.8 Nano-Power Management and Efficiency
    4. 7.4 Device Functional Modes
      1. 7.4.1 Main Boost Charger Disabled (Ship Mode) - (VSTOR > VSTOR_CHGEN and EN = HIGH)
      2. 7.4.2 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS), EN = don't care)
      3. 7.4.3 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN and EN = LOW )
        1. 7.4.3.1 Buck Converter Enabled (VSTOR > VBAT_UV, EN = LOW and VOUT_EN = HIGH )
      4. 7.4.4 Thermal Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Energy Harvester Selection
      2. 8.1.2 Storage Element Selection
      3. 8.1.3 Inductor Selection
        1. 8.1.3.1 Boost Charger Inductor Selection
        2. 8.1.3.2 Buck Converter Inductor Selection
      4. 8.1.4 Capacitor Selection
        1. 8.1.4.1 VREF_SAMP Capacitance
        2. 8.1.4.2 VIN_DC Capacitance
        3. 8.1.4.3 VSTOR Capacitance
        4. 8.1.4.4 VOUT Capacitance
        5. 8.1.4.5 Additional Capacitance on VSTOR or VBAT
    2. 8.2 Typical Applications
      1. 8.2.1 Solar Application Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 TEG Application Circuit
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
      3. 8.2.3 Piezoelectric Application Circuit
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Nano-Power Management and Efficiency

The high efficiency of the bq25570 charger is achieved through the proprietary Nano-Power management circuitry and algorithm. This feature essentially samples and holds the VSTOR voltage to reduce the average quiescent current.  That is, the internal circuitry is only active for a short period of time and then off for the remaining period of time at the lowest feasible duty cycle.  A portion of this feature can be observed in Figure 28 where the VRDIV node is monitored. Here the VRDIV node provides a connection to the VSTOR voltage (first pulse) and then generates the reference levels for the VBAT_OV and VBAT_OK resistor dividers for a short period of time. The divided down values at each pin are compared against VBIAS as part of the hysteretic control. Because this biases a resistor string, the current through these resistors is only active when the Nano-Power management circuitry makes the connection—hence reducing the overall quiescent current due to the resistors. This process repeats every 64 ms.

The efficiency of the bq25570 boost charger is shown for various input power levels in Figure 1 through Figure 7.  All efficiency data points were captured by averaging 50 measurements of the input current in between MPPT sampling events. This must be done due to the pulsing currents of the hysteretic, discontinuous mode boost and buck converters.  Quiescent currents into VSTOR, VBAT_SEC and VBAT_PRI over temperature and voltage are shown at Figure 8 through Figure 9