ZHCSQ82 September   2022 BQ25176M

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power Up from Input Source
        1. 7.3.1.1 ISET Pin Detection
        2. 7.3.1.2 VSET Pin Detection
        3. 7.3.1.3 Charger Power Up
      2. 7.3.2 Battery Charging Features
        1. 7.3.2.1 Lithium-Ion Battery Charging Profile
        2. 7.3.2.2 Input Voltage Based Dynamic Power Management (VINDPM)
        3. 7.3.2.3 Charge Termination and Battery Recharge
      3. 7.3.3 Status Outputs ( PG, STAT)
        1. 7.3.3.1 Power Good Indicator (PG Pin)
        2. 7.3.3.2 Charging Status Indicator (STAT)
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Input Overvoltage Protection (VIN_OV)
        2. 7.3.4.2 Output Overvoltage Protection (VOUT_OVP)
        3. 7.3.4.3 Output Overcurrent Protection (IOUT_OCP)
        4. 7.3.4.4 Thermal Regulation and Thermal Shutdown (TREG and TSHUT)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown or Undervoltage Lockout (UVLO)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
        1. 7.4.3.1 Standby Mode
      4. 7.4.4 Fault Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Li-Ion Charger Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 LiFePO4 Charger Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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10.1 Layout Guidelines

To obtain optimal performance, the decoupling capacitor from the IN pin to the GND pin and the output filter capacitor from the OUT pin to the GND pin should be placed as close as possible to the device, with short trace runs to both IN, OUT, and GND.

  • All low-current GND connections should be kept separate from the high-current charge or discharge paths from the battery. Use a single-point ground technique incorporating both the small signal ground path and the power ground path.
  • The high current charge paths into the IN pin and from the OUT pin must be sized appropriately for the maximum charge current in order to avoid voltage drops in these traces.

To achieve correct pin detection, the ISET pin and VSET pin resistors should be placed as close as possible to the device, with short trace runs to both ISET, VSET, and GND.