UCC23511 5kV 单通道隔离式栅极驱动器 | 德州仪器 TI.com.cn

UCC23511 (预发布) 5kV 单通道隔离式栅极驱动器

 

Sample availability

Preproduction samples are available (PUCC23511DWY). Request now

描述

The UCC23511 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 1.5-A source and 2-A sink peak output current and 5.7-KVRMS reinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23511 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (ediode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in a stretched SO6 package with >8.5mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) >600V. UCC23511’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.

特性

  • 5.7-kVRMS single channel isolated gate driver with opto-compatible input
  • Pin-to-pin, drop in upgrade for opto isolated gate drivers
  • 1.5-A source / 2-A sink, peak output current
  • 14-V to 33-V output driver supply voltage
  • Rail-to-rail output
  • 105-ns (maximum) propagation delay
  • 25-ns (maximum) part-to-part delay matching
  • 35-ns (maximum) pulse width distortion
  • 150-kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life >50 Years
  • 13-V reverse polarity voltage handling capability on input stage
  • Stretched SO-6 package with >8.5-mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • Safety-related certifications (Planned):
    • 8000-VPKreinforced isolation per DIN V VDE V0884-11: 2017-01
    • 5.7-KVRMS isolation for 1 minute per UL 1577
    • CQC certification per GB4943.1-2011

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参数

与其它产品相比 隔离栅极驱动器 邮件 下载到电子表格中
Part number 立即下单 Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC23511 立即下单 5700     8000     1500     1     SiCFET
MOSFET
IGBT    
  33     14     1     70     -40 to 125     SOIC | 6    
UCC23313 无样片 3750     6000     990     1     SiCFET
MOSFET
IGBT    
  33     14     4.5     70     -40 to 125     SOIC | 6    
UCC23513 立即下单 5700     8000     1500     1     SiCFET
MOSFET
IGBT    
    33     14     4.5     70     -40 to 125     SOIC | 6