ZHCSHU2B March   2018  – October 2018 TPS7A10

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      压降与 IOUT 和温度间的关系(YKA 封装)
      2.      典型应用电路
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
      2. 7.3.2 Global Undervoltage Lockout (UVLO)
      3. 7.3.3 Active Discharge
      4. 7.3.4 Enable
      5. 7.3.5 Sequencing Requirement
      6. 7.3.6 Internal Foldback Current Limit
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disable Mode
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitor Requirements
      3. 8.1.3 Load Transient Response
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Behavior During Transition From Dropout Into Regulation
      6. 8.1.6 Undervoltage Lockout Circuit Operation
      7. 8.1.7 Power Dissipation (PD)
        1. 8.1.7.1 Estimating Junction Temperature
        2. 8.1.7.2 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Current
        2. 8.2.2.2 Thermal Dissipation
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 Spice 模型
      2. 11.1.2 器件命名规则
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

Electrical Characteristics

over TJ = –40°C to +125°C, VIN = VOUT(NOM) + 0.5 V, VBIAS = VOUT(NOM) + 1.4 V, IOUT = 1 mA, VEN = 1.0 V, CIN = 2.2 μF, COUT = 2.2 μF, and CBIAS = 0.1 μF ( unless otherwise noted); all typical values are at TJ = 25°C .
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Nominal Accuracy TJ = 25°C –0.5 0.5 %
Accuracy over temperature –20°C ≤ TJ ≤ 85, DSE package
VOUT(NOM) + 0.5 V ≤ VIN ≤ 3.3 V,
VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V,
1 mA ≤ IOUT ≤ 300 mA
–1.25 1.25
–40°C ≤ TJ ≤ 85, YKA package
VOUT(NOM) + 0.5 V ≤ VIN ≤ 3.3 V,
VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V,
1 mA ≤ IOUT ≤ 300 mA
–1.25 1.25
–40°C ≤ TJ ≤ 125, DSE and YKA package
VOUT(NOM) + 0.5 V ≤ VIN ≤ 3.3 V,
VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V,
1 mA ≤ IOUT ≤ 300 mA
–1.5 1.5
ΔVOUT / ΔVIN VIN line regulation  VOUT(NOM) + 0.5 V ≤ VIN ≤ 3.3 V 0.001 %/V
ΔVOUT / ΔVBIAS VBIAS line regulation VOUT(NOM) + 1.4 V ≤ VBIAS ≤ 5.5 V 0.03 %/V
ΔVOUT / ΔIOUT Load regulation 0.1 mA ≤ IOUT ≤ 300 mA 0.2 %/A
IQ(BIAS) Bias pin current TJ = 25°C, IOUT = 0 mA 3 6 8 µA
–40°C < TJ < 85°C, IOUT = 0 mA 11
IOUT = 0 mA 14
IOUT = 300 mA 60
IQ(IN) Input pin current(1) TJ = 25°C, IOUT = 0 mA 1.6 2.1 µA
–40°C < TJ < 85°C, IOUT = 0 mA 2.3
IOUT = 0 mA 2.6
IOUT = 300 mA 9
ISHDN(BIAS) VBIAS  shutdown current –40°C < TJ < 85°C,
VIN = 3.3 V, VBIAS = 5.5 V, VEN ≤ 0.4 V
400 nA
–40°C < TJ < 125°C,
VIN = 3.3 V, VBIAS = 5.5 V, VEN ≤ 0.4 V
1200
ISHDN(IN) VIN  shutdown current –40°C < TJ < 85°C,
VIN = 3.3 V, VBIAS = 5.5 V, VEN ≤ 0.4 V
1 µA
–40°C < TJ < 125°C,
VIN = 3.3 V, VBIAS = 5.5 V, VEN ≤ 0.4 V
3
ICL Output current limit VOUT = 0.9 × VOUT(NOM), YKA package 325 450 600 mA
VOUT = 0.9 × VOUT(NOM), DSE package 350 450 625 mA
ISC Short circuit current limit VOUT = 0 V 150 mA
VDO(IN) VIN dropout voltage(2) VIN = VOUT(NOM) – 0.1 V, IOUT = 300 mA, YKA package 40 70 mV
VIN = VOUT(NOM) – 0.1 V, IOUT = 300 mA, DSE package 55 90
VDO(BIAS) VBIAS dropout voltage(2) IOUT = 300 mA 0.85 1.05 V
IOUT = 150 mA 0.75 0.95
VIN PSRR VIN power-supply rejection ratio f = 1 kHz,
VOUT = 1.1 V, IOUT = 50 mA
60 dB
f = 100 kHz, 
VOUT = 1.1 V, IOUT = 50 mA
36
f = 1 MHz,
VOUT = 1.1 V, IOUT = 50 mA
32
f = 1.5 MHz,
VOUT = 1.1 V, IOUT = 50 mA
35
VBIAS PSRR VBIAS power-supply rejection ratio f = 1 kHz,
VOUT = 1.1 V, IOUT = 300 mA
60 dB
f = 100 kHz,
VOUT = 1.1 V, IOUT = 300 mA
40
f = 1 MHz,
VOUT = 1.1 V, IOUT = 300 mA
35
Vn Output voltage noise Bandwidth = 10 Hz to 100 kHz,
VOUT = 1.0 V, IOUT = 50 mA
93.9 µVRMS
VUVLO(BIAS) Bias supply UVLO VBIAS rising 1.46 1.54 1.63 V
VBIAS falling 1.35 1.44 1.55
VUVLO_HYST(BIAS) Bias supply hysteresis VBIAS hysteresis 80 mV
VUVLO(IN) Input supply UVLO  VIN rising 645 675 710 mV
VIN falling 565 600 640 mV
VUVLO_HYST(IN) Input supply hysteresis VIN hysteresis 75 mV
tSTR Start-up time(3)
525 1200 µs
VHI(EN) EN pin logic high voltage 0.9 V
VLO(EN) EN pin logic low voltage 0.4 V
IEN EN pin current EN = 5.5 V 10 nA
RPULLDOWN Pulldown resistor VBIAS = 3.3 V, P version only 120 Ω
TSD Thermal shutdown temperature Shutdown, temperature rising 160 °C
Reset, temperature falling 145
This current flowing from VIN to GND.
Dropout is not measured for VOUT < 1.0 V
Startup time = time from EN assertion to 0.95 × VOUT(NOM).