ZHCSBA7B June   2013  – July 2014 CSD18537NQ5A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7机械封装和可订购信息
    1. 7.1 Q5A 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 布局
    3. 7.3 建议模板开口
    4. 7.4 Q5A 卷带信息

6 器件和文档支持

6.1 Trademarks

NexFET is a trademark of Texas Instruments.

6.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

6.3 术语表

SLYZ022TI 术语表

这份术语表列出并解释术语、首字母缩略词和定义。