SLVK158 November 2023 TPS7H6003-SP
PRODUCTION DATA
The TPS7H6003-SP is a 200-V radiation-hardness-assured (RHA) Gallium Nitride (GaN) Field Effect Transistor (FET) gate driver designed for high frequency, high efficiency applications. The driver features:
In IIM mode the user also has the ability to enable or disable the turn-on of both outputs when both inputs are on simultaneously (interlock protection). This gives the driver the ability to be used in multiple converter configurations.
The device is offered in a 48-pin ceramic package. General device information and test conditions are listed in Table 1-1. For more detailed technical specifications, user guides, and application notes, see TPS7H6003-SP product page.
DESCRIPTION(1) | DEVICE INFORMATION |
---|---|
TI part number | TPS7H6003-SP |
Orderable number | 5962R2220101VXC |
Device function | 200-V half-bridge eGaN gate driver |
Technology | LBC7 (Linear BiCMOS 7) |
Exposure facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV / nucleon) |
Heavy ion fluence per run | 9.97 × 106 – 1.00 × 107 ions / cm2 |
Irradiation temperature | 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing) |