SLUSC99A July   2016  – January 2017 UCD3138128A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 PMBus/SMBus/I2C Timing
    8. 7.8 Typical Characteristics
    9. 7.9 Timing Diagrams
  8. 8 Parametric Measurement Information
    1. 8.1 Typical Clock Gating Power Savings
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 ARM Processor
      2. 9.1.2 Memory
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  System Module
        1. 9.3.1.1 Address Decoder (DEC)
        2. 9.3.1.2 Memory Management Controller (MMC)
        3. 9.3.1.3 System Management (SYS)
        4. 9.3.1.4 Central Interrupt Module (CIM)
      2. 9.3.2  Peripherals
        1. 9.3.2.1 Digital Power Peripherals (DPPs)
          1. 9.3.2.1.1 Front End
          2. 9.3.2.1.2 DPWM Module
          3. 9.3.2.1.3 DPWM Events
          4. 9.3.2.1.4 High Resolution DPWM
          5. 9.3.2.1.5 Oversampling
          6. 9.3.2.1.6 DPWM Interrupt Generation
          7. 9.3.2.1.7 DPWM Interrupt Scaling/Range
          8. 9.3.2.1.8 Synchronous Rectifier Dead Time Optimization Peripheral
      3. 9.3.3  Automatic Mode Switching
        1. 9.3.3.1 Phase Shifted Full Bridge Example
        2. 9.3.3.2 LLC Example
        3. 9.3.3.3 Mechanism For Automatic Mode Switching
      4. 9.3.4  DPWMC, Edge Generation, Intramux
      5. 9.3.5  Synchronous Rectifier MOSFET Ramp And IDE Calculation
      6. 9.3.6  Filter
        1. 9.3.6.1 Loop Multiplexer
        2. 9.3.6.2 Fault Multiplexer
      7. 9.3.7  Communication Ports
        1. 9.3.7.1 SCI (UART) Serial Communication Interface
        2. 9.3.7.2 PMBUS/I2C
          1. 9.3.7.2.1 Example: PMBus Address Decode via ADC12 Reading
        3. 9.3.7.3 SPI
        4. 9.3.7.4 JTAG Standard Interface
      8. 9.3.8  Real Time Clock
      9. 9.3.9  External Crystal Interface
      10. 9.3.10 Timers
        1. 9.3.10.1 24-Bit Timer
        2. 9.3.10.2 16-Bit PWM Timers
        3. 9.3.10.3 Watchdog Timer
      11. 9.3.11 General Purpose ADC12
      12. 9.3.12 Miscellaneous Analog
      13. 9.3.13 Brownout
      14. 9.3.14 Global I/O
      15. 9.3.15 Temperature Sensor Control
      16. 9.3.16 I/O Mux Control
      17. 9.3.17 Current Sharing Control
      18. 9.3.18 Temperature Reference
    4. 9.4 Device Functional Modes
      1. 9.4.1 DPWM Modes of Operation
        1. 9.4.1.1 Normal Mode
        2. 9.4.1.2 DPWM Multiple Output Mode
        3. 9.4.1.3 DPWM Resonant Mode
        4. 9.4.1.4 Triangular Mode
        5. 9.4.1.5 Leading Edge Mode
        6. 9.4.1.6 Phase Shifting
    5. 9.5 Register Maps
      1. 9.5.1 CPU Memory Map And Interrupts
        1. 9.5.1.1 Memory Map (After Reset Operation)
        2. 9.5.1.2 Memory Map (Normal Operation)
        3. 9.5.1.3 Memory Map (System And Peripherals Blocks)
      2. 9.5.2 Boot ROM
        1. 9.5.2.1 Pseudo Code for ROM
      3. 9.5.3 Customer Boot Program
      4. 9.5.4 Flash Management
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 PCMC (Peak Current Mode Control) PSFB (Phase Shifted Full Bridge) Hardware Configuration Overview
        2. 10.2.2.2 DPWM Initialization for PSFB
        3. 10.2.2.3 DPWM Synchronization
        4. 10.2.2.4 Fixed Signals to Bridge
        5. 10.2.2.5 Dynamic Signals to Bridge
      3. 10.2.3 System Initialization for PCM
        1. 10.2.3.1 Use of Front Ends and Filters in PSFB
        2. 10.2.3.2 Peak Current Detection
        3. 10.2.3.3 Peak Current Mode (PCM)
      4. 10.2.4 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Device Grounding and Layout Guidelines
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
        1. 13.2.1.1 References
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
MIN MAX
Voltage V33D to DGND –0.3 3.8 V
V33DIO to DGND –0.3 3.8 V
V33A to AGND –0.3 3.8 V
BP18 to DGND -0.3 2.5 V
Ground difference, |DGND – AGND| 0.3 V
Voltage applied to any pin, excluding AGND(2) –0.3 3.8 V
Junction Temperature, TJ –40 125 °C
Storage temperature range, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Referenced to DGND

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Digital power V33D 3.0 3.3 3.6 V
Digital I/O power V33DIO 3 3.3 3.6 V
Analog power V33A 3 3.3 3.6 V
Digital power BP18 1.6 1.8 2 V
Junction temperature, TJ –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TQFP (QFN) UNIT
80-PIN
RθJA Junction-to-ambient thermal resistance 47.8 °C/W
RθJCtop Junction-to-case (top) thermal resistance 7.8
RθJB Junction-to-board thermal resistance 24.4
ψJT Junction-to-top characterization parameter 0.2
ψJB Junction-to-board characterization parameter 24.0
RθJCbot Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, .

7.5 Electrical Characteristics

V33A = V33D = V33DIO = 3 V to 3.6 V; 1 μF from BP18 to DGND, TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY CURRENT
I33A(5) Measured on V33A. The device is powered up but all ADC12 and EADC sampling is disabled 7.5 mA
I33DIO(5) All GPIO and communication pins are open 0.35 mA
I33D(5) ROM program execution 69 mA
I33 The device is in ROM mode with all DPWMs enabled and switching at 2 MHz. The DPWMs are all unloaded. 90 100 mA
ERROR ADC INPUTS EAP, EAN
EAP – AGND(5) –0.15 1.998 V
EAP – EAN(5) –0.256 1.848 V
Typical error range(5) AFE = 0 –256 248 mV
EAP – EAN Error voltage digital resolution AFE = 3 0.8 1 1.25 mV
AFE = 2 1.7 2 2.4 mV
AFE = 1 3.55 4 4.5 mV
AFE = 0 6.90 8 9.10 mV
REA Input impedance(5)
(See Figure 11)		 AGND reference 0.5 MΩ
IOFFSET Input offset current(5)
(See Figure 11)		 EADC is in idle state –5 5 μA
EADC Offset Input voltage = 0 V at AFE = 0 –20 20 mV
Input voltage = 0 V at AFE = 1 –10 10 mV
Input voltage = 0 V at AFE = 2 –6 6 mV
Input voltage = 0 V at AFE = 3 –4 4 mV
Sample Rate(5) 15.625 MHz
Analog Front End Amplifier Bandwidth(5) 100 MHz
A0 Gain(5) See Figure 12 1 V/V
Minimum output voltage 25 mV
EADC DAC
DAC range 0 1.6 V
VREF DAC reference resolution 10 bit, No dithering enabled 1.56 mV
VREF DAC reference resolution(5) With 4 bit dithering enabled 97.6 μV
INL Ensured INL –1.5 1.5 LSB
Typical INL (TJ =25°C, V33A = V33D = V33DIO = 3.3 V) –0.4/+0.7 LSB
DNL Guaranteed DNL –2.0 1 LSB
Typical DNL (TJ = 25°C, V33A = V33D = V33DIO = 3.3 V) –0.4/+0.3 LSB
DAC reference voltage 1.58 1.61 V
ADC12
IBIAS Bias current for PMBus address pins 9.5 10.5 μA
Measurement range for voltage monitoring 0 2.5 V
Internal ADC reference voltage 2.475 2.500 2.525 V
Change in Internal ADC reference from 25°C reference voltage(5) 25°C to –40°C –2.36 mV
25°C to 125°C –5.45
ADC12 INL integral nonlinearity, end point(5) ADC_SAMPLING_SEL = 0 or 7 for all ADC12 data –3.9 –2.5/2.2 4.5 LSB
ADC12 INL integral nonlinearity, best fit line(5) –2.4 –1.6/1.7 2.9 LSB
ADC12 DNL differential nonlinearity(5) –1.0 –0.6/+2.6 3.8 LSB
ADC Zero Scale Error –5 5 mV
ADC Full Scale Error –30 30 mV
Input bias 2.5 V applied to pin 200 nA
Input leakage resistance(5) ADC_SAMPLING_SEL = 0 2 MΩ
ADC_SAMPLING_SEL = 7 1 MΩ
Input Capacitance(5) 10 pF
DIGITAL INPUTS/OUTPUTS(2)
VOL Low-level output voltage(3)(1) IOH = 4 mA, V33DIO = 3 V DGND
+ 0.25		 V
VOH High-level output voltage (3) IOH = –4 mA, V33DIO = 3 V V33DIO – 0.6 V
VIH High-level input voltage V33DIO = 3 V 2.1 V
VIL Low-level input voltage V33DIO = 3 V 1.1 V
IOH Output sinking current 4 mA
IOL Output sourcing current –4 mA
SYSTEM PERFORMANCE
ISHARE Current share current source (See Figure 34) 238 259 μA
RSHARE Current share resistor (See Figure 34) 9.6 10.4 kΩ
POWER ON RESET AND BROWN OUT (V33A PIN)
VGH Voltage good High See Figure 9 2.302 2.53 2.836 V
VGL Voltage good Low 2.248 2.48 2.781 V
Vres Voltage at which IReset signal is valid(5) 0.8 V
Brownout Internal signal warning of brownout conditions 2.774 2.9 3.077 V
TEMPERATURE SENSOR
VTEMP Voltage range of sensor(5) 1.46 2.44 V
Voltage resolution(5) Volts/°C 6.3 mV/ºC
Temperature resolution(5) Degree C per bit 0.0969 ºC/LSB
Accuracy(5)(6) –40°C to 125°C –10 ±5 10 ºC
Temperature range(5) –40°C to 125°C –40 125 ºC
ITEMP Current draw of sensor when active(5) 30 μA
VAMB Ambient temperature Trimmed 25°C reading 1.858 1.9 1.954 V
ANALOG COMPARATOR
DAC Reference DAC Range(5) 0.019 2.5 V
Reference voltage 2.478 2.5 2.513 V
Bits 7 bits
INL(5) –0.5 0.21 LSB
DNL(5) 0.06 0.12 LSB
Offset –5.5 19.5 mV
Reference DAC buffered output load(7) –0.5 1 mA
Buffer offset (–0.5 mA) 0.156 V < DAC < 2.363 V –10 10 mV
Buffer offset (1.0 mA) 0.059 V < DAC < 2.305 V –10 10 mV
RTC INTERFACE
fRTC RTC external input frequency (8) 10 MHz
(1) DPWM outputs are low after reset. Other GPIO pins are configured as inputs after reset.
(2) On the 40 pin package V33DIO is connected to V33D internally.
(3) The maximum total current, IOHmax and IOLmax for all outputs combined, should not exceed 12 mA to hold the maximum voltage drop specified. Maximum sink current per pin = –6 mA at VOL; maximum source current per pin = 6 mA at VOH.
(4) Time from close of error ADC sample window to time when digitally calculated control effort (duty cycle) is available. This delay, which has no variation associated with it, must be accounted for when calculating the system dynamic response.
(5) Characterized by design and not production tested.
(6) Ambient temperature offset value from the TEMPSENCTRL register should be used to meet accuracy.
(7) Available from reference DACs for comparators D, E, F and G.
(8) Performance dependent on selected external components. The maximum frequency should be no more than 12 MHz.

7.6 Timing Characteristics

V33A = V33D = V33DIO = 3.0 V to 3.6 V; 1 μF from BP18 to DGND, TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
EADC DAC
t Settling Time(1) From 10% to 90% 250 ns
ADC12
ADC single sample conversion time(1) ADC_SAMPLING_SEL= 0 3.9 μs
ADC single sample conversion time(1) ADC_SAMPLING_SEL= 7 1..9 μs
SYSTEM PERFORMANCE
Processor master clock (MCLK) 31.25 MHz
tDelay Digital filter delay(4) 6 MCLKs
f(PCLK) Internal oscillator frequency –40°C to +125°C 240 250 260 MHz
–5°C to +85°C 245 250 255 MHz
TWD Watchdog time out range(1) Total time is: TWD x (WDCTRL.PERIOD+1) 12.02 13.08 13.65 ms
Time to disable DPWM output based on active FAULT pin signal(1) High level on FAULT pin 80 ns
Flash Read 1 MCLKs
Retention period of flash content (data retention and program) TJ = 25°C 100 years
Program time to erase one page or block in data flash or program flash 20 ms
Program time to write one word in program flash 50 µs
Program time to write one word in data flash 40 µs
Sync-in/sync-out pulse width(1) Sync pin 256 ns
POWER ON RESET AND BROWN OUT (V33A pin, See Figure 9)
tPOR(1) Time delay after power is good or RESET* relinquished 1 ms
tEXC1 The time it takes from the device to exit a reset state and begin executing the boot flash.(1) IRESET goes from a low state to a high state. This is approximately equivalent to toggling the external reset pin from low to high state. 0.5 ms
tEXC2 The time it takes from the device to exit a reset state and begin executing program flash bank 0 (32 kB).(1) IRESET goes from a low state to a high state. This is approximately equivalent to toggling the external reset pin from low to high state. 3 ms
tEXCT The time it takes from the device to exit a reset state and begin executing the total program flash (64 kB).(1) IRESET goes from a low state to a high state. This is approximately equivalent to toggling the external reset pin from low to high state. 6 ms
TEMPERATURE SENSOR(1)
tON(1) Turn on time / settling time of sensor 100 μs
ANALOG COMPARATOR
Time to disable DPWM output based on 0 V to 2.5 V step input on the analog comparator.(1) 90 150 ns
(1) Characterized by design and not production tested.

7.7 PMBus/SMBus/I2C Timing

The timing characteristics and timing diagram for the communications interface that supports I2C, SMBus, and PMBus in Slave or Master mode are shown in PMBus/SMBus/I2C Timing, Figure 6, and Figure 7. The numbers in PMBus/SMBus/I2C Timing shows that the device supports standard (100 kHz), fast (400 kHz), and fast-mode plus (1 MHz) speeds. (1)
PARAMETER TEST CONDITIONS 100 kHz Class 400 kHz Class 1 MHz Class(2) UNIT
MIN MAX MIN MAX MIN MAX
Typical values at TA = 25 °C and VCC = 3.3 V (unless otherwise noted)
fSMB SMBus/PMBus operating frequency Slave mode, SMBC 50% duty cycle 10 100 10 400 10 1000 kHz
fI2C I2C operating frequency Slave mode, SCL 50% duty cycle 10 100 10 400 10 1000 kHz
t(BUF) Bus free time between start and stop 4.7 1.3 0.5 µs
t(HD:STA) Hold time after (repeated) start 4 0.6 0.26 µs
t(SU:STA) Repeated start setup time 4.7 0.6 0.26 µs
t(SU:STO) Stop setup time 4 0.6 0.26 µs
t(HD:DAT) Data hold time Receive mode 0 0 0 ns
t(SU:DAT) Data setup time 250 100 50 ns
t(TIMEOUT) Error signal/detect 25 35 25 35 25 35 ms
t(LOW) Clock low period 4.7 1.3 0.5 µs
t(HIGH) Clock high period 4 50 0.6 50 0.26 50 µs
t(LOW:SEXT) Cumulative clock low slave extend time 25 25 25 ms
tr Clock/data fall time Rise time tr = (VILmax – 0.15) to (VIHmin + 0.15) 20
+ 0.1 Cb		 300 20
+ 0.1 Cb		 300 20
+ 0.1 Cb		 120 ns
tf Clock/data rise time Fall time tf = 0.9 VDD to (VILmax – 0.15) 20
+ 0.1 Cb		 1000 20
+ 0.1 Cb		 300 20
+ 0.1 Cb		 120 ns
Cb Total capacitance of one bus line 400 pF
(1) Values dependent on bus pull up resistor selection and are not ATE tested.
(2) Characterized by design and not production tested.

7.8 Typical Characteristics

UCD3138128A G005a_SLUSBL8.gif
Figure 1. EADC LSB Size With 4x Gain (Mv) vs. Temperature
UCD3138128A G003b_SLUSBL8.gif
Figure 3. ADC12 2.5-V Reference vs. Temperature
UCD3138128A G004c_SLUSBL8.gif
2 MHz Reference, Divided Down From 250 MHz
Figure 5. Oscillator Frequency vs. Temperature
UCD3138128A G006b_SLUSBL8.gif
Figure 2. ADC12 Measurement Temperature Sensor Voltage vs. Temperature
UCD3138128A G002b_SLUSBL8.gif
Figure 4. ADC12 Temperature Sensor Measurement Error vs. Temperature

7.9 Timing Diagrams

UCD3138128A I2C_tim_dia_lusap2.gif Figure 6. IC/SMBUS/PMBUS Timing Diagram2
UCD3138128A bus_timing_lusap2.gif Figure 7. Bus Timing In Extended Mode