ZHCSAO6G December   2012  – June 2019 UCC27531 , UCC27533 , UCC27536 , UCC27537 , UCC27538

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      无需负偏压即可驱动 IGBT
  4. 4 修订历史记录
    1.     说明 （续）
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 VDD Undervoltage Lockout
      2. 8.3.2 Input Stage
      3. 8.3.3 Enable Function
      4. 8.3.4 Output Stage
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Driving IGBT Without Negative Bias
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input-to-Output Configuration
          2. 9.2.1.2.2 Input Threshold Type
          3. 9.2.1.2.3 VDD Bias Supply Voltage
          4. 9.2.1.2.4 Peak Source and Sink Currents
          5. 9.2.1.2.5 Enable and Disable Function
          6. 9.2.1.2.6 Propagation Delay
          7. 9.2.1.2.7 Power Dissipation
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Driving IGBT With 13-V Negative Turn-Off BIAS
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 Single-Output Driver
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
      4. 9.2.4 Using UCC2753x Drivers in an Inverter
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Consideration
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.1.2.1 Input-to-Output Configuration

The design should specify which type of input-to-output configuration should be used. If turning on the power MOSFET or IGBT when the input signal is in high state is preferred, then a device capable of the non-inverting configuration must be selected. If turning off the power MOSFET or IGBT when the input signal is in high state is preferred, then a device capable of the inverting configuration must be chosen.

If ground-debouncing is a potential issue, a split output device should be chosen (UCC27531, or UCC27538). On these devices, OUTH sources current to charge the MOSFET or IGBT gate when transitioning from an output LOW to HIGH, and OUTL sinks current to discharge the MOSFET or IGBT gate when transitioning from an output HIGH to LOW.

If dual inputs are required, the chosen device should be either the UCC27533, or the UCC27538.

Based on these requirements, the proper device out of the UCC27531, UCC27533, UCC27536, UCC27537, or UCC27538 should be selected. See the Device Functional Modes section for information on individual device functionality and the Device Comparison Table table.