ZHCSBI9C August   2013  – October 2015 UCC27211A

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stages
      2. 8.3.2 Undervoltage Lockout (UVLO)
      3. 8.3.3 Level Shift
      4. 8.3.4 Boot Diode
      5. 8.3.5 Output Stages
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Threshold Type
        2. 9.2.2.2 VDD Bias Supply Voltage
        3. 9.2.2.3 Peak Source and Sink Currents
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 社区资源
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD(2), VHB – VHS Supply voltage range –0.3 20 V
VLI, VHI Input voltages on LI and HI –10 20 V
VLO Output voltage on LO DC –0.3 VDD + 0.3 V
Repetitive pulse < 100 ns(3) –2 VDD + 0.3
VHO Output voltage on HO DC VHS – 0.3 VHB + 0.3 V
Repetitive pulse < 100 ns(3) VHS – 2 VHB + 0.3
VHS Voltage on HS DC –1 115 V
Repetitive pulse < 100 ns(3) –(24 V – VDD) 115
VHB Voltage on HB –0.3 120 V
TJ Operating virtual junction temperature range –40 150 °C
TSTG Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to VSS unless otherwise noted. Currents are positive into and negative out of the specified terminal.
(3) Verified at bench characterization. VDD is the value used in an application design.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

all voltages are with respect to VSS; currents are positive into and negative out of the specified terminal. –40°C < TJ = TA < 140°C (unless otherwise noted)
MIN NOM MAX UNIT
VDD, VHB – VHS Supply voltage range 8 12 17 V
VHS Voltage on HS –1 105 V
VHS Voltage on HS (repetitive pulse < 100 ns) –(24 V – VDD) 110 V
VHB Voltage on HB VHS + 8,
VDD – 1		 VHS + 17,
115		 V
Voltage slew rate on HS 50 V/ns
Operating junction temperature –40 140 °C

7.4 Thermal Information

THERMAL METRIC(1) UCC27211A UNIT
D (SOIC) DRM (SON)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 111.8 37.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.9 47.2 °C/W
RθJB Junction-to-board thermal resistance 53.0 9.6 °C/W
ψJT Junction-to-top characterization parameter 7.8 2.8 °C/W
ψJB Junction-to-board characterization parameter 52.3 9.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 3.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VDD = VHB = 12 V, VHS = VSS = 0 V, no load on LO or HO, TA = TJ = –40°C to 140°C, (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current V(LI) = V(HI) = 0 V 0.05 0.085 0.17 mA
IDDO VDD operating current UCC27210A f = 500 kHz, CLOAD = 0 2.1 2.6 6.5 mA
UCC27211A f = 500 kHz, CLOAD = 0 2.1 2.5 6.5
IHB Boot voltage quiescent current V(LI) = V(HI) = 0 V 0.015 0.065 0.1 mA
IHBO Boot voltage operating current f = 500 kHz, CLOAD = 0 1.5 2.5 5.1 mA
IHBS HB to VSS quiescent current V(HS) = V(HB) = 115 V 0.0005 1 µA
IHBSO HB to VSS operating current f = 500 kHz, CLOAD = 0 0.07 1.2 mA
INPUT
VHIT Input voltage threshold 1.9 2.3 2.7 V
VLIT Input voltage threshold 1.3 1.6 1.9 V
VIHYS Input voltage hysteresis 700 mV
RIN Input pulldown resistance 68 kΩ
UNDER-VOLTAGE LOCKOUT (UVLO)
VDDR VDD turnon threshold 6.2 7 7.8 V
VDDHYS Hysteresis 0.5 V
VHBR VHB turnon threshold 5.6 6.7 7.9 V
VHBHYS Hysteresis 1.1 V
BOOTSTRAP DIODE
VF Low-current forward voltage IVDD-HB = 100 µA 0.65 0.8 V
VFI High-current forward voltage IVDD-HB = 100 mA 0.85 0.95 V
RD Dynamic resistance, ΔVF/ΔI IVDD-HB = 100 mA and 80 mA 0.3 0.5 0.85 Ω
LO GATE DRIVER
VLOL Low-level output voltage ILO = 100 mA 0.05 0.1 0.19 V
VLOH High level output voltage ILO = –100 mA, VLOH = VDD – VLO 0.1 0.16 0.29 V
Peak pullup current(3) VLO = 0 V 3.7 A
Peak pulldown current(3) VLO = 12 V 4.5 A
HO GATE DRIVER
VHOL Low-level output voltage IHO = 100 mA 0.05 0.1 0.19 V
VHOH High-level output voltage IHO = –100 mA, VHOH = VHB – VHO 0.1 0.16 0.29 V
Peak pullup current(3) VHO = 0 V 3.7 A
Peak pulldown current(3) VHO = 12 V 4.5 A
(1) Typical values for TA = 25°C.
(2) IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.
(3) Ensured by design.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PROPAGATION DELAYS
TDLFF VLI falling to VLO falling CLOAD = 0 10 16 30 ns
TDHFF VHI falling to VHO falling CLOAD = 0 10 16 30 ns
TDLRR VLI rising to VLO rising CLOAD = 0 10 20 42 ns
TDHRR VHI rising to VHO rising CLOAD = 0 10 20 42 ns
DELAY MATCHING
TMON From HO OFF to LO ON TJ = 25°C 4 9.5 ns
TJ = –40°C to 140°C 4 17 ns
TMOFF From LO OFF to HO ON TJ = 25°C 4 9.5 ns
TJ = –40°C to 140°C 4 17 ns
OUTPUT RISE AND FALL TIME
tR LO rise time CLOAD = 1000 pF, from 10% to 90% 7.2 ns
tR HO rise time CLOAD = 1000 pF, from 10% to 90% 7.2 ns
tF LO fall time CLOAD = 1000 pF, from 90% to 10% 5.5 ns
tF HO fall time CLOAD = 1000 pF, from 90% to 10% 5.5 ns
tR LO, HO CLOAD = 0.1 µF, (3 V to 9 V) 0.36 0.6 µs
tF LO, HO CLOAD = 0.1 µF, (9 V to 3 V) 0.15 0.4 µs
MISCELLANEOUS
Minimum input pulse width that changes the output 50 ns
Bootstrap diode turnoff time(3)(2) IF = 20 mA, IREV = 0.5 A(1) 20 ns
UCC27211A fig22_lus746.gif Figure 1. Timing Diagram

7.7 Typical Characteristics

UCC27211A 0001_IDD_IHB_vs_VDD_VHB_lusat7.gif
T = 25°C
Figure 2. Quiescent Current vs Supply Voltage
UCC27211A 0003_UCC27211_IDDO_vs_Freq_lusat7.gif
VDD = 12 V
Figure 4. IDD Operating Current vs Frequency
UCC27211A 0005_VIHL_vs_VDD_lusat7.gif
T = 25°C
Figure 6. Input Threshold vs Supply Voltage
UCC27211A 0007_VOH_vs_Temp_lusat7.gif
IHO = ILO = 100 mA
Figure 8. LO and HO High-Level Output Voltage
vs Temperature
UCC27211A 0009_UVLO_vs_Temp_lusat7.png
Figure 10. Undervoltage Lockout Threshold
vs Temperature
UCC27211A 0011_UCC27210_Delay_vs_Temp_lusat7.gif
VDD = VHB = 12 V
Figure 12. Propagation Delays vs Temperature
UCC27211A 0014_UCC27211_Delay_vs_VDD_lusat7.gif
T = 25°C
Figure 14. Propagation Delays vs Supply Voltage
(VDD = VHB)
UCC27211A out_new_sluscg0.gif
VDD = VHB = 12 V
Figure 16. Output Current vs Output Voltage
UCC27211A 0002_UCC27210_IDDO_vs_Freq_lusat7.gif
VDD = 12 V
Figure 3. IDD Operating Current vs Frequency
UCC27211A 0004_IHBO_vs_Freq_lusat7.gif
VHB – VHS = 12 V
Figure 5. Boot Voltage Operating Current vs
Frequency (HB To HS)
UCC27211A 0006_VIHL_vs_Temp_lusat7.gif
VDD = 12 V
Figure 7. Input Thresholds vs Temperature
UCC27211A 0008_VOL_vs_Temp_lusat7.gif
IHO = ILO = 100 mA
Figure 9. LO and HO Low-Level Output Voltage
vs Temperature
UCC27211A 0010_UVLO_HYS_vs_Temp_lusat7.png
Figure 11. Undervoltage Lockout Threshold Hysteresis
vs Temperature
UCC27211A 0012_UCC27211_Delay_vs_Temp_lusat7.gif
VDD = VHB = 12 V
Figure 13. Propagation Delays vs Temperature
UCC27211A 0015_DelayMatching_vs_Temp_lusat7.gif
VDD = VHB = 12 V
Figure 15. Delay Matching vs Temperature
UCC27211A 0017_DiodeCurrent_vs_DiodeVoltage_lusat7.png
Figure 17. Diode Current vs Diode Voltage